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SI3474DV 데이터시트(PDF) 5 Page - Vishay Siliconix |
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SI3474DV 데이터시트(HTML) 5 Page - Vishay Siliconix |
5 / 11 page Document Number: 62875 S13-1664-Rev. A, 29-Jul-13 www.vishay.com 5 Vishay Siliconix Si3474DV This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 For technical questions, contact: pmostechsupport@vishay.com TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) * The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Current Derating* 0 1.05 2.1 3.15 4.2 0 25 50 75 100 125 150 T C - Case Temperature (°C) Power, Junction-to-Foot 0 1.1 2.2 3.3 4.4 0 25 50 75 100 125 150 T C - Case Temperature (°C) Power, Junction-to-Ambient 0 0.35 0.7 1.05 1.4 0 25 50 75 100 125 150 T A - Ambient Temperature (°C) |
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