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SI5853CDC 데이터시트(PDF) 5 Page - Vishay Siliconix |
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SI5853CDC 데이터시트(HTML) 5 Page - Vishay Siliconix |
5 / 10 page Document Number: 69774 S10-0547-Rev. B, 08-Mar-10 www.vishay.com 5 Vishay Siliconix Si5853CDC MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Source-Drain Diode Forward Voltage Threshold Voltage 0 0.2 0.4 0.6 0.8 1.0 1.2 TJ = 150 °C TJ = 25 °C 10 1 VSD ) V ( e g a t l o V n i a r D - o t - e c r u o S - 0.3 0.4 0.5 0.6 0.7 0.8 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA TJ - Temperature (°C) On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient 0.05 0.10 0.15 0.20 0.25 0.30 01 2 3 45 ID = 2.5 A VGS - Gate-to-Source Voltage (V) 125 °C 25 °C 0.001 0 1 50 10 30 10 0.01 Time (s) 20 40 0.1 100 1000 0.0001 Safe Operating Area, Junction-to-Ambient 0.01 VDS - Drain-to-Source Voltage (V) * VGS minimum VGS at which RDS(on) is specified 10 0.1 0.1 1 10 1 TA = 25 °C Single Pulse 100 ms 1 s, 10 s DC 100 µs 100 10 ms 0.01 1 ms BVDSS Limited Limited by R * DS(on) |
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