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2SA1661 데이터시트(PDF) 2 Page - Galaxy Semi-Conductor Holdings Limited |
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2SA1661 데이터시트(HTML) 2 Page - Galaxy Semi-Conductor Holdings Limited |
2 / 4 page Production specification Silicon Planar Epitaxial Transistor 2SA1661 E094 www.gmicroelec.com Rev.A 2 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-1mA,IE=0 -120 V Collector- emitter breakdown voltage V(BR)CEO IC=-10mA,IB=0 -120 V Emitter- base breakdown voltage V(BR)EBO IE=-1mA, IC=0 -5 V Collector cut-off current ICBO VCB=-120V,IE=0 -0.1 μA Emitter cut-off current IEBO VEB=-5V,IC=0 -0.1 μA DC current gain hFE VCE=-5V,IC=-100mA 80 240 Collector-emitter saturation voltage VCE(sat) IC=-500mA,IB=-50mA -1.0 V Base-emitter VBE VCE=-5V,IC=-500mA -1.0 V Transition frequency fT VCE=-5V, IC=-100mA 120 MHz Collector output capacitance Cob VCB=-10V,IE=0,f=1MHz 30 pF CLASSIFICATION OF hFE Rank O Y Range 80-160 120-240 Marking DO DY |
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