전자부품 데이터시트 검색엔진 |
|
PE4312MLBA-Z 데이터시트(PDF) 4 Page - Peregrine Semiconductor |
|
PE4312MLBA-Z 데이터시트(HTML) 4 Page - Peregrine Semiconductor |
4 / 13 page Product Specification PE4312 Page 4 of 13 ©2017 Peregrine Semiconductor Corp. All rights reserved. Document No. DOC-81482-1 │ UltraCMOS® RFIC Solutions Electrostatic Discharge (ESD) Precautions When handling this UltraCMOS device, observe the same precautions that you would use with other ESD-sensitive devices. Although this device contains circuitry to protect it from damage due to ESD, precautions should be taken to avoid exceeding the rate specified. Latch-Up Avoidance Unlike conventional CMOS devices, UltraCMOS devices are immune to latch-up. Switching Frequency The PE4312 has a maximum 25 kHz switching rate in normal mode (pin 12 = GND). A faster switching rate is available in bypass mode (pin 12 = VSS_EXT). The rate at which the PE4312 can be switched is then limited to the switching time as specified in Table 1. Switching frequency describes the time duration between switching events. Switching time is the time duration between the point the control signal reaches 50% of the final value and the point the output signal reaches within 10% or 90% of its target value. Resistor on Pin 1 & 3 A 10 kΩ resistor on the inputs to pin 1 and 3 (see Figure 26) will eliminate package resonance between the RF input pin and the two digital inputs. Specified attenuation error versus frequency performance is dependent upon this condition. Moisture Sensitivity Level The moisture sensitivity level rating for the PE4312 in the 4 × 4 mm QFN package is MSL1. Spurious Performance The typical low-frequency spurious performance of the PE4312 in normal mode is –140 dBm (pin 12 = GND). If spur-free performance is desired, the internal negative voltage generator can be disabled by applying a negative voltage to VSS_EXT (pin 12). Safe Attenuation State Transitions The PE4312 features a novel architecture to provide safe transition behavior when changing attenuation states. When RF input power is applied, positive output power spikes are prevented during attenuation state changes by optimized internal timing control. Figure 4. Power Derating Curve for 1–50 MHz 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 0 5 10 15 20 25 30 35 40 45 50 Frequency (MHz) RF Input Power, CW or Pulsed (‐40C to 105C) |
유사한 부품 번호 - PE4312MLBA-Z |
|
유사한 설명 - PE4312MLBA-Z |
|
|
링크 URL |
개인정보취급방침 |
ALLDATASHEET.CO.KR |
ALLDATASHEET 가 귀하에 도움이 되셨나요? [ DONATE ] |
Alldatasheet는? | 광고문의 | 운영자에게 연락하기 | 개인정보취급방침 | 링크교환 | 제조사별 검색 All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |