전자부품 데이터시트 검색엔진 |
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STD181GK22B 데이터시트(PDF) 3 Page - Sirectifier Semiconductors |
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STD181GK22B 데이터시트(HTML) 3 Page - Sirectifier Semiconductors |
3 / 4 page 0 0 PTAV ITAV 50 W A Fig.1L Power dissipation per thyristor vs. on-state current 0 0 PTAV 50 W 100 100 Fig.1R Power dissipation per thyristor vs. ambient temp Ta C O 150 K/W Rth(j-a) 0 0 Pvtot IRMS 100 W A Fig.2L Power dissipation per module vs. rms current 100 0 0 50 W 100 Fig.2R Power dissipation per module vs. case temp Ta C O C O 150 K/W Rth(c - a) Pvtot 0 0 Pvtot W A Fig.3L Power dissipation of two modules vs. direct current 100 ID 0 0 50 W 100 Fig.3 R Power dissipation of two modules vs. case temp Ta Tc C O C O 150 K/W Pvtot Rth(c-a) R 200 100 100 150 STD181B 1/2 . rec. 15 30 60 90 120 sin. 180 rec. 180 cont. 300 400 200 200 300 1 STD181B . Tc 100 200 300 400 200 300 200 200 500 400 500 125 116 107 98 89 1000 400 L 1000 125 116 107 98 89 80 0.08 300 300 2.5 2 1.6 1.2 1 0.8 0.7 0.6 0.5 0.45 0.4 0.35 0.3 0.25 0.2 80 1 0.8 0.5 0.6 0.4 0.3 0.25 0.2 0.17 0.14 0.1 0.12 0.07 0.04 0.02 200 400 600 800 1200 200 400 600 800 1200 71 0.5 0.4 0.3 0.25 0.2 0.16 0.12 0.1 0.06 0.07 0.04 0.02 0.05 0.03 Thyristor-Diode Modules STD181GKXX B STD181B 2. P3 ©2008 SIRECTIFIER All rights reserved, Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: sales@sirectifier.com www.sirectifier.com |
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