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STP8N90K5 데이터시트(PDF) 4 Page - STMicroelectronics |
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4 / 13 page Electrical characteristics STP8N90K5 4/13 DocID030086 Rev 1 2 Electrical characteristics TC = 25 °C unless otherwise specified Table 5: On/off-state Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage VGS = 0 V, ID = 1 mA 900 V IDSS Zero gate voltage drain current VGS = 0 V, VDS = 900 V 1 µA VGS = 0 V, VDS = 900 V, TC = 125 °C(1) 50 µA IGSS Gate body leakage current VDS = 0 V, VGS = ±20 V ±10 µA VGS(th) Gate threshold voltage VDS = VGS, ID = 100 µA 3 4 5 V RDS(on) Static drain-source on-resistance VGS = 10 V, ID = 4 A 0.60 0.68 Ω Notes: (1)Defined by design, not subject to production test. Table 6: Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Ciss Input capacitance VDS = 100 V, f = 1 MHz, VGS = 0 V - 426 - pF Coss Output capacitance - 41 - pF Crss Reverse transfer capacitance - 1.2 - pF Co(tr)(1) Equivalent capacitance time related VDS = 0 to 720 V, VGS = 0 V - 75 - pF Co(er)(2) Equivalent capacitance energy related - 28 - pF Rg Intrinsic gate resistance f = 1 MHz , ID= 0 A - 7 - Ω Qg Total gate charge VDD = 720 V, ID = 8 A, VGS= 10 V (see Figure 15: "Test circuit for gate charge behavior") - 11 - nC Qgs Gate-source charge - 3.5 - nC Qgd Gate-drain charge - 4.8 - nC Notes: (1)Time related is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS (2)Energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss when VDS increases from 0 to 80% VDSS |
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