STD6N62K3 datasheet(4/19 Pages) STMICROELECTRONICS

부품명	STD6N62K3

상세설명	Very low intrinsic capacitance

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4 / 19 page

Electrical characteristics

STB6N62K3, STD6N62K3

4/19

Doc ID 022605 Rev 1

2

Electrical characteristics

(TC = 25 °C unless otherwise specified)

Table 4.

On /off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

breakdown voltage

ID = 1 mA, VGS = 0

620

V

IDSS

Zero gate voltage

drain current (VGS = 0)

VDS = 620 V

VDS = 620 V, TC=125 °C

0.8

50

µA

IGSS

Gate-body leakage

current (VDS = 0)

VGS = ± 20 V

± 9

µA

VGS(th)

Gate threshold voltage VDS = VGS, ID = 50 µA

3

3.75

4.5

V

RDS(on

Static drain-source on

resistance

VGS = 10 V, ID = 2.8 A

0.95

1.2

Ω

Table 5.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 50 V, f = 1 MHz, VGS = 0

-

875

100

17

-

pF

Coss(er)

(1)

1.

Is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

increases from 0 to 80% VDSS

Equivalent output

capacitance energy

-28

-

pF

Coss(tr)

(2)

2.

Is defined as a constant equivalent capacitance giving the same storage energy as Coss when VDS

increases from 0 to 80% VDSS

Equivalent output

capacitance time

-

pF

RG

Intrinsic gate

resistance

f = 1 MHz open drain

-

3.5

-

Ω

Qg

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD = 496 V, ID = 5.5 A,

VGS = 10 V

(see Figure 18)

-

34

4

22

-

nC

유사한 부품 번호 - STD6N62K3

제조업체	부품명	데이터시트	상세설명
STMicroelectronics	STD6N62K3	433Kb / 17P	N-channel 620 V, 1.1 廓, 5.5 A, IPAK, DPAK, TO-220,TO-220FP SuperMESH3??Power MOSFET

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