STB13N60M2 datasheet(5/23 Pages) STMICROELECTRONICS

부품명	STB13N60M2

상세설명	Extremely low gate charge

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5 / 23 page

STB13N60M2, STD13N60M2

Electrical characteristics

DocID024569 Rev 4

5/23

Table 7: Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on

delay time

VDD = 300 V, ID = 5.5 A, RG = 4.7

Ω,

VGS = 10 V (see Figure 16: "Test circuit for

resistive load switching times" and Figure 21:

"Switching time waveform")

-

11

-

ns

tr

Rise time

-

10

-

ns

td(off)

Turn-off-

delay time

-

41

-

ns

tf

Fall time

-

9.5

-

ns

Table 8: Source-drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ISD

Source-drain

current

-

11

A

ISDM(1)

Source-drain

current

(pulsed)

-

44

A

VSD (2)

Forward on

voltage

VGS = 0 V, ISD = 11 A

-

1.6

V

trr

Reverse

recovery time

ISD = 11 A, di/dt = 100 A/µs, VDD = 60 V

(see Figure 18: "Test circuit for inductive

load switching and diode recovery times")

-

297

ns

Qrr

Reverse

recovery

charge

-

2.8

µC

IRRM

Reverse

recovery

current

-

18.5

A

trr

Reverse

recovery time

ISD = 11 A, di/dt = 100 A/µs, VDD = 60 V,

Tj = 150 °C (see Figure 18: "Test circuit for

inductive load switching and diode

recovery times")

-

394

ns

Qrr

Reverse

recovery

charge

-

3.8

µC

IRRM

Reverse

recovery

current

-

19

A

Notes:

(1)Pulse width is limited by safe operating area.

(2)Pulsed: pulse duration = 300 µs, duty cycle 1.5%.

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