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3 / 15 page STB43N60DM2 Electrical ratings DocID028058 Rev 1 3/15 1 Electrical ratings Table 2: Absolute maximum ratings Symbol Parameter Value Unit VGS Gate-source voltage ±25 V ID Drain current (continuous) at Tcase = 25 °C 34 A Drain current (continuous) at Tcase = 100 °C 21 IDM (1) Drain current (pulsed) 136 A PTOT Total dissipation at Tcase = 25 °C 250 W dv/dt (2) Peak diode recovery voltage slope 50 V/ns dv/dt (3) MOSFET dv/dt ruggedness 50 Tstg Storage temperature -55 to 150 °C Tj Operating junction temperature Notes: (1) Pulse width is limited by safe operating area. (2) ISD ≤ 34 A, di/dt=900 A/μs; VDS peak < V(BR)DSS, VDD = 400 V. (3) VDS ≤ 480 V. Table 3: Thermal data Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case 0.50 °C/W Rthj-pcb (1) Thermal resistance junction-pcb 30 Notes: (1) When mounted on a 1-inch² FR-4, 2 Oz copper board. Table 4: Avalanche characteristics Symbol Parameter Value Unit IAR Avalanche current, repetitive or not repetitive 6 A EAS (1) Single pulse avalanche energy 800 mJ Notes: (1) starting Tj = 25 °C, ID = IAR, VDD = 50 V. |
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