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STD9N40M2 데이터시트(PDF) 5 Page - STMicroelectronics |
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STD9N40M2 데이터시트(HTML) 5 Page - STMicroelectronics |
5 / 16 page DocID025752 Rev 2 5/16 STD9N40M2 Electrical characteristics 16 Table 8. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit I SD Source-drain current - 6 A I SDM (1) 1. Pulse width limited by safe operating area. Source-drain current (pulsed) - 24 A V SD (2) 2. Pulsed: pulse duration = 300 μs, duty cycle 1.5% Forward on voltage V GS = 0, I SD = 6 A - 1.6 V t rr Reverse recovery time I SD = 6 A, di/dt = 100 A/μs V DD = 60 V (see Figure 16) - 208 ns Q rr Reverse recovery charge - 1.2 μC I RRM Reverse recovery current - 11.5 A t rr Reverse recovery time I SD = 6 A, di/dt = 100 A/μs V DD = 60 V, T j = 150 °C (see Figure 16) - 264 ns Q rr Reverse recovery charge - 1.6 μC I RRM Reverse recovery current - 12.5 A |
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