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STP25N10F7 데이터시트(PDF) 3 Page - STMicroelectronics |
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3 / 21 page DocID025265 Rev 1 3/21 STD25N10F7, STF25N10F7, STP25N10F7 Electrical ratings 21 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit DPAK TO-220 TO-220FP V DS Drain-source voltage 100 V V GS Gate-source voltage ± 20 V I D (1) 1. This value is rated according to R thj-c . Drain current (continuous) at T C = 25 °C 25 25 19 A I D (1) Drain current (continuous) at T C = 100 °C 18 18 13.5 A I DM (2) 2. Pulse width limited by safe operating area. Drain current (pulsed) 100 100 76 A P TOT (1) Total dissipation at T C = 25 °C 40 50 25 W V ISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s; T C = 25 °C) -2500 V T J Operating junction temperature -55 to 175 °C T stg Storage temperature °C Table 3. Thermal resistance Symbol Parameter Value Unit DPAK TO-220FP TO-220 R thj-case Thermal resistance junction-case 3.75 6 3 °C/W R thj-amb Thermal resistance junction-ambient 62.5 °C/W R thj-pcb Thermal resistance junction-pcb 50 °C/W |
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