STD52P3LLH6 datasheet(5/16 Pages) STMICROELECTRONICS

부품명	STD52P3LLH6

상세설명	P-channel 30 V, 0.01 廓 typ., 52 A, STripFET??H6 Power MOSFET in a DPAK package

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STD52P3LLH6

Electrical characteristics

DocID025835 Rev 2

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Table 6: Switching on/off (inductive load)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay

time

VDD = 24 V, ID = 15 A,

RG = 4.7 Ω, VGS = 10 V

( see Figure 13: "Switching times test

circuit for resistive load")

-

12.8

-

ns

tr

Rise time

-

112

-

ns

td(off)

Turn-off delay

time

-

61

-

ns

tf

Fall time

-

45

-

ns

Table 7: Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

VSD

(1)

Forward on

voltage

ISD = 52 A, VGS = 0

-

1.1

V

trr

Reverse recovery

time

ISD = 52 A,

di/dt = 100 A/µs,

VDD = 24 V

(see Figure 15: "Source-drain diode

forward characteristics")

-

25.2

ns

Qrr

Reverse recovery

charge

-

17.4

nC

IRRM

Reverse recovery

current

-

1.4

A

Notes:

(1)

Pulsed: pulse duration = 300 µs, duty cycle 1.5%

For the P-channel Power MOSFETs the actual polarity of the voltages and the

current must be reversed.

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