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STD80N10F7 데이터시트(PDF) 1 Page - STMicroelectronics |
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STD80N10F7 데이터시트(HTML) 1 Page - STMicroelectronics |
1 / 25 page This is information on a product in full production. February 2014 DocID025865 Rev 1 1/25 STD80N10F7, STF80N10F7, STH80N10F7-2, STP80N10F7 N-channel 100 V, 0.008 Ω typ., 80 A STripFET™ VII DeepGATE™ Power MOSFETs in DPAK, TO-220FP, H 2 PAK-2 and TO-220 Datasheet - production data Figure 1. Internal schematic diagram Features • Extremely low gate charge • Ultra low on-resistance • Low gate input resistance Applications • Switching applications Description These devices utilize the 7 th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest R DS(on) in all packages. TO-220 DPAK H PAK-2 2 1 3 TAB 1 2 3 TAB 1 3 2 TAB 1 2 3 TO-220FP Order codes VDS @ TJmax RDS(on) max ID PTOT STD80N10F7 100 V 0.01 Ω 70 A 85 W STF80N10F7 0.01 Ω 40 A 30 W STH80N10F7-2 0.0095 Ω 80 A 110 W STP80N10F7 0.01 Ω Table 1. Device summary Order codes Marking Package Packaging STD80N10F7 80N10F7 DPAK Tape and reel STF80N10F7 TO-220FP Tube STH80N10F7-2 H 2 PAK-2 Tape and reel STP80N10F7 TO-220 Tube www.st.com |
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