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STD110N8F6 데이터시트(PDF) 1 Page - STMicroelectronics |
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STD110N8F6 데이터시트(HTML) 1 Page - STMicroelectronics |
1 / 16 page This is information on a product in full production. December 2014 DocID027274 Rev 1 1/16 STD110N8F6 N-channel 80 V, 0.0056 Ω typ.,80 A, STripFET™ F6 Power MOSFET in a DPAK package Datasheet - production data Figure 1. Internal schematic diagram Features • Very low on-resistance • Very low gate charge • High avalanche ruggedness • Low gate drive power loss Applications • Switching applications Description This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Order code VDS RDS(on)max ID PTOT STD110N8F6 80 V 0.0065 Ω 80 A 167 W Table 1. Device summary Order code Marking Package Packing STD110N8F6 110N8F6 DPAK Tube www.st.com |
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