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STDLED656 데이터시트(PDF) 4 Page - STMicroelectronics

부품명 STDLED656
상세설명  Gate charge minimized
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Electrical characteristics
STDLED656, STFILED656, STPLED656, STULED656
4/22
DocID024429 Rev 1
2
Electrical characteristics
(Tcase =25 °C unless otherwise specified)
Table 4.
On /off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source
breakdown voltage
ID = 1 mA, VGS = 0
650
V
IDSS
Zero gate voltage
drain current (VGS = 0)
VDS = 650 V
VDS = 650 V, TC=125 °C
0.8
50
µA
µA
IGSS
Gate-body leakage
current (VDS = 0)
VGS = ± 20 V; VDS=0
±9
µA
VGS(th)
Gate threshold voltage VDS = VGS, ID = 50 µA
3
3.6
4.5
V
RDS(on)
Static drain-source on
resistance
VGS = 10 V, ID = 2.7 A
1.1
1.3
Ω
Table 5.
Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 100 V, f = 1 MHz,
VGS = 0
-
895
67
12.5
-
pF
pF
pF
Coss eq.
(1)
1.
Coss eq. energy related is defined as a constant equivalent capacitance giving the same stored energy as
Coss when VDS increases from 0 to 80% VDSS
Equivalent
capacitance energy
related
VDS = 0 to 520 V, VGS = 0
-
27
-
pF
Rg
Gate input resistance
f=1 MHz open drain
-
3.5
-
Ω
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 500 V, ID = 5.4 A,
VGS = 10 V
(see Figure 17)
-
34
4
21
-
nC
nC
nC
Table 6.
Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max
Unit
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
VDD = 325 V, ID = 2.7 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 17)
-
14
10
44
24
-
ns
ns
ns
ns
Obsolete
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