STFW12N120K5 datasheet(5/16 Pages) STMICROELECTRONICS

부품명	STFW12N120K5

상세설명	Ultra low gate charge

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DocID026396 Rev 2

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STF12N120K5, STFW12N120K5

Electrical characteristics

16

The built-in back-to-back Zener diodes have been specifically designed to enhance the ESD

capability of the device. The Zener voltage is appropriate for efficient and cost-effective

intervention to protect the device integrity. These integrated Zener diodes thus eliminate the

need for external components.

Table 6. Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

VDD = 600 V, ID = 6 A,

RG=4.7 Ω, VGS=10 V

(see Figure 20)

-23

-

ns

tr

Rise time

-

11

-

ns

td(off)

Turn-off delay time

-

68.5

-

ns

tf

Fall time

-

18.5

-

ns

Table 7. Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ISD

Source-drain current

-

12

A

ISDM

Source-drain current (pulsed)

-

48

A

VSD

(1)

1.

Pulsed: pulse duration = 300µs, duty cycle 1.5%

Forward on voltage

ISD= 12 A, VGS=0

-

1.5

V

trr

Reverse recovery time

ISD= 12 A, VDD= 60 V

di/dt = 100 A/µs,

(see Figure 19)

-

630

ns

Qrr

Reverse recovery charge

-

12.6

µC

IRRM

Reverse recovery current

-

40

A

trr

Reverse recovery time

ISD= 12 A,VDD= 60 V

di/dt=100 A/µs,

Tj=150 °C

(see Figure 19)

-

892

ns

Qrr

Reverse recovery charge

-

15.6

µC

IRRM

Reverse recovery current

-

35

A

Table 8. Gate-source Zener diode

Symbol

Parameter

Test conditions

Min

Typ.

Max.

Unit

V(BR)GSO Gate-source breakdown voltage

IGS = ±1 mA, ID = 0

30

-

V

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