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STFI13N65M2 데이터시트(PDF) 5 Page - STMicroelectronics |
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STFI13N65M2 데이터시트(HTML) 5 Page - STMicroelectronics |
5 / 15 page DocID026893 Rev 2 5/15 STF13N65M2,STFI13N65M2 Electrical characteristics 15 Table 8. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD Source-drain current - 10 A ISDM (1) 1. Pulse width limited by safe operating area. Source-drain current (pulsed) - 40 A VSD (2) 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Forward on voltage ISD =10 A, VGS =0 V - 1.6 V trr Reverse recovery time ISD = 10 A, di/dt = 100 A/µs, VDD =60 V (see Figure 16) - 312 ns Qrr Reverse recovery charge - 2.7 µC IRRM Reverse recovery current - 17.5 A trr Reverse recovery time ISD = 10 A, di/dt = 100 A/µs, VDD =60 V, Tj =150 °C, (see Figure 16) - 464 ns Qrr Reverse recovery charge - 4.1 µC IRRM Reverse recovery current - 17.5 A |
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