STF18N60M2 datasheet(3/13 Pages) STMICROELECTRONICS

부품명	STF18N60M2

상세설명	Low gate input resistance

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DocID024729 Rev 3

3/13

STF18N60M2

Electrical ratings

1

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

Value

Unit

V

GS

Gate-source voltage

± 25

V

I

D

Drain current (continuous) at T

C

= 25 °C

13

(1)

1.

Limited by maximum junction temperature

A

I

D

Drain current (continuous) at T

C

= 100 °C

8

(1)

A

I

DM

(2)

2.

Pulse width limited by safe operating area

Drain current (pulsed)

52

(1)

A

P

TOT

Total dissipation at T

C

= 25 °C

25

W

dv/dt

(3)

3.

I

SD

≤ 13 A, di/dt ≤ 400 A/μs; V

DS peak

< V

(BR)DSS

, V

DD

=400 V.

Peak diode recovery voltage slope

15

V/ns

dv/dt

(4)

4.

V

DS

≤ 480 V

MOSFET dv/dt ruggedness

50

V/ns

V

ISO

Insulation withstand voltage (RMS) from

all three leads to external heat sink

(t = 1 s,T

C

= 25 °C)

2500

V

T

stg

Storage temperature

- 55 to 150

°C

T

j

Max. operating junction temperature

Table 3. Thermal data

Symbol

Parameter

Value

Unit

R

thj-case

Thermal resistance junction-case max

5

°C/W

R

thj-amb

Thermal resistance junction-ambient max

62.5

°C/W

Table 4. Avalanche characteristics

Symbol

Parameter

Value

Unit

I

AR

Avalanche current, repetetive or not

repetetive (pulse width limited by T

jmax

)

3A

E

AS

Single pulse avalanche energy (starting

T

j

=25°C, I

D

= I

AR

; V

DD

=50)

135

mJ

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