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3 / 13 page DocID024729 Rev 3 3/13 STF18N60M2 Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit V GS Gate-source voltage ± 25 V I D Drain current (continuous) at T C = 25 °C 13 (1) 1. Limited by maximum junction temperature A I D Drain current (continuous) at T C = 100 °C 8 (1) A I DM (2) 2. Pulse width limited by safe operating area Drain current (pulsed) 52 (1) A P TOT Total dissipation at T C = 25 °C 25 W dv/dt (3) 3. I SD ≤ 13 A, di/dt ≤ 400 A/μs; V DS peak < V (BR)DSS , V DD =400 V. Peak diode recovery voltage slope 15 V/ns dv/dt (4) 4. V DS ≤ 480 V MOSFET dv/dt ruggedness 50 V/ns V ISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s,T C = 25 °C) 2500 V T stg Storage temperature - 55 to 150 °C T j Max. operating junction temperature Table 3. Thermal data Symbol Parameter Value Unit R thj-case Thermal resistance junction-case max 5 °C/W R thj-amb Thermal resistance junction-ambient max 62.5 °C/W Table 4. Avalanche characteristics Symbol Parameter Value Unit I AR Avalanche current, repetetive or not repetetive (pulse width limited by T jmax ) 3A E AS Single pulse avalanche energy (starting T j =25°C, I D = I AR ; V DD =50) 135 mJ |
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