DocID025737 Rev 1

3/12

STFI20NM65N

Electrical ratings

12

1

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

Value

Unit

V

DS

Drain source voltage

650

V

V

GS

Gate source voltage

± 25

V

I

D

Drain current continuous T

C

=25 °C

15

(1)

1.

Limited only by maximum temperature allowed.

A

I

D

Drain current continuous T

C

=100 °C

9.45

A

I

DM

(2)

2.

Pulse width limited by safe operating area.

Drain current pulsed

60

A

P

TOT

Total dissipation at T

C

=25 °C

30

W

dv/dt

(3)

3.

I

15 A, di/dt

≤ 400 A/μs, V

V

(BR)DSS

, V

DD

= 80% V

(BR)DSS

.

Peak diode recovery voltage slope

15

V/ns

V

ISO

Insulation withstand voltage (RMS) from all three leads

to external heatsink

(t=1 s; T

C

= 25 °C)

2500

V

T

stg

T

J

Storage temperature

Max. operating junction temperature

-55 to 150

150

°C

Table 3. Thermal data

Symbol

Parameters

Value

Unit

R

thjc

Thermal resistance junction-case max.

4.17

°C/W

R

thja

Thermal resistance junction-ambient max.

62.5

°C/W

Table 4. Avalanche characteristics

Symbol

Parameters

Value

Unit

I

AS

Avalanche current, repetitive or not-repetitive (pulse

width limited by T

j max

)

4A

E

AS

Single pulse avalanche energy (starting T

J

= 25 °C,

I

D

= I

AR

, V

DD

= 50 V)

115

mJ