STFU24N60M2 datasheet(3/12 Pages) STMICROELECTRONICS

부품명	STFU24N60M2

상세설명	N-channel 600 V, 0.168 廓 typ., 18 A MDmesh??M2 Power MOSFET in a TO-220FP ultra narrow leads package

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STFU24N60M2

Electrical ratings

DocID027630 Rev 2

3/12

1

Electrical ratings

Table 2: Absolute maximum ratings

Symbol

Parameter

Value

Unit

VGS

Gate-source voltage

± 25

V

ID

Drain current (continuous) at TC = 25 °C

18(1)

A

ID

Drain current (continuous) at TC = 100 °C

12(1)

A

IDM(2)

Drain current (pulsed)

72(1)

A

PTOT

Total dissipation at TC = 25 °C

30

W

VISO

Insulation withstand voltage (RMS) from all three leads to

external heat sink (t = 1 s; TC = 25 °C)

2500

V

dv/dt (3)

Peak diode recovery voltage slope

15

V/ns

dv/dt (4)

MOSFET dv/dt ruggedness

50

Tstg

Storage temperature

- 55 to

150

°C

Tj

Max. operating junction temperature

Notes:

(1)Limited by maximum junction temperature.

(2)Pulse width limited by safe operating area.

(3)ISD ≤ 18 A, di/dt ≤ 400 A/µs; VDSpeak < V(BR)DSS, VDD = 400 V.

(4)VDS ≤ 480 V.

Table 3: Thermal data

Symbol

Parameter

Value

Unit

Rthj-case

Thermal resistance junction-case max

4.2

°C/W

Rthj-amb

Thermal resistance junction-ambient max

62.5

Table 4: Avalanche characteristics

Symbol

Parameter

Value

Unit

IAR

Avalanche current, repetitive or not repetitive (pulse width

limited by Tjmax)

3.5

A

EAS

Single pulse avalanche energy (starting Tj = 25°C, ID = IAR;

VDD = 50 V)

180

mJ

유사한 부품 번호 - STFU24N60M2

제조업체	부품명	데이터시트	상세설명
STMicroelectronics	STFU25N60M2-EP	271Kb / 13P	N-channel 600 V, 0.175 typ., 18 A MDmeshTM M2 EP Power MOSFET in a TO-220FP ultra narrow leads package May 2018 Rev 4
	STFU260N4F7	466Kb / 10P	N-channel 40 V, 1.95 mΩ typ., 90 A, STripFET™ F7 Power MOSFET in a TO-220FP ultra narrow leads package November 2015
	STFU26N60M2	704Kb / 12P	N-channel 600 V, 0.14 Ω typ., 20 A MDmeshTM M2 Power MOSFET in TO-220FP ultra narrow leads package July 2017 Rev 1
	STFU28N65M2	660Kb / 12P	Extremely low gate charge

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유사한 설명 - STFU24N60M2

제조업체	부품명	데이터시트	상세설명
STMicroelectronics	STFH24N60M2	747Kb / 12P	N-channel 600 V, 0.168 ??typ., 18 A MDmesh??M2 Power MOSFET in a TO-220FP wide creepage package June 2016 Rev 2
	STFU18N60M2	513Kb / 12P	N-channel 600 V, 0.255 typ., 13 A MDmesh M2 Power MOSFET in a TO-220FP ultra narrow leads package June 2019 Rev 3
	STFU13N65M2	759Kb / 12P	N-channel 650 V, 0.37 廓 typ., 10 A MDmesh??M2 Power MOSFET in a TO-220FP ultra narrow leads package May 2015 Rev 1
	STF25N60M2-EP	335Kb / 14P	N-channel 600 V, 0.175 廓 typ., 18 A MDmesh??M2 EP Power MOSFET in a TO-220FP package January 2015 Rev 2
	STFU9N65M2	462Kb / 12P	N-channel 650 V, 0.79 typ., 5 A MDmesh M2 Power MOSFET in a TO-220FP ultra narrow leads package June 2019 Rev 3
	STFU25N60M2-EP	271Kb / 13P	N-channel 600 V, 0.175 typ., 18 A MDmeshTM M2 EP Power MOSFET in a TO-220FP ultra narrow leads package May 2018 Rev 4
	STFU11N65M2	454Kb / 12P	N-channel 650 V, 0.60 typ., 7 A MDmesh M2 Power MOSFET in a TO-220FP ultra narrow leads package June 2019 Rev 2
	STF9HN65M2	444Kb / 13P	N-channel 600 V, 0.71 廓 typ., 5.5 A MDmesh??M2 Power MOSFET in a TO-220FP package April 2015 Rev 2
	STFU13N60M2	655Kb / 12P	N-channel 600 V, 0.35 typ., 11 A MDmeshTM M2 Power MOSFET in a TO-220FP ultra narrow leads package September 2015 Rev 2
	STFU15N80K5	902Kb / 13P	N-channel 800 V, 0.3 廓 typ., 14 A MDmesh??K5 Power MOSFET in a TO-220FP ultra narrow leads package August 2013 Rev 1

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