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Si4312-B10-GM 데이터시트(PDF) 4 Page - Silicon Laboratories

부품명 Si4312-B10-GM
상세설명  315/433.92 MHZ OOK RECEIVER
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제조업체  SILABS [Silicon Laboratories]
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Si4312
4
Rev. 0.5
1. Electrical Specifications
Table 1. Recommended Operating Conditions*
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Supply Voltage
VDD
2.7
3.3
3.6
V
Supply Voltage Powerup Rise Time
VDD-RISE
10
μs
Ambient Temperature
TA
–40
25
85
°C
*Note: All minimum and maximum specifications are guaranteed and apply across the recommended operating conditions.
Typical values apply at VDD = 3.3 V and 25 C unless otherwise stated. Parameters are tested in production unless
otherwise stated.
Table 2. Absolute Maximum Ratings1,2
Parameter
Symbol
Value
Unit
Supply Voltage
VDD
–0.5 to 3.9
V
Input Current3
IIN
10
mA
Input Voltage3
VIN
–0.3 to (VDD + 0.3)
V
Operating Temperature
TOP
–45 to 95
C
Storage Temperature
TSTG
–55 to 150
C
RF Input Level4
0.4
VPK
Notes:
1. Permanent device damage may occur if the absolute maximum ratings are exceeded. Functional operation should be
restricted to the conditions as specified in the operational sections of this data sheet. Exposure beyond recommended
operating conditions for extended periods may affect device reliability.
2. The Si4312 device is a high-performance RF integrated circuit with certain pins having an ESD rating of < 2 kV HBM.
Handling and assembly of this device should only be done at ESD-protected workstations.
3. For input pins 315/434, RATIO, BT[1:0], TH[1:0].
4. At RF input pin RX_IN.


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