 |
전자부품 데이터시트 검색엔진 |
|
|
전자부품 데이터시트 검색엔진 |
|
SI4340DY-T1 데이터시트(PDF) 2 Page - Vishay Siliconix |
|
||||||||||||||||||||||||||||||
SI4340DY-T1 데이터시트(HTML) 2 Page - Vishay Siliconix |
|
|
2 / 9 page  Si4340DY Vishay Siliconix New Product www.vishay.com 2 Document Number: 72376 S-31857—Rev. A, 15-Sep-03 MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED). Parameter Symbol Test Condition Min Typa Max Unit Static Gate Threshold Voltage VGS(th) VDS = VGS ID = 250 mA Ch-1 0.8 2.00 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 mA Ch-2 0.8 1.90 V Gate Body Leakage IGSS VDS = 0 V, VGS = "20 V Ch-1 100 nA Gate-Body Leakage IGSS VDS = 0 V, VGS = "12 V Ch 1 Ch-2 100 nA VDS = 20 V VGS = 0 V Ch-1 1 Zero Gate Voltage Drain Current IDSS VDS = 20 V, VGS = 0 V Ch 1 Ch-2 100 mA Zero Gate Voltage Drain Current IDSS VDS = 20 V VGS = 0 V TJ = 85_C Ch-1 15 mA VDS = 20 V, VGS = 0 V, TJ = 85_C Ch 1 Ch-2 4000 On State Drain Currentb ID( ) VDS = 5 V VGS = 10 V Ch-1 20 A On-State Drain Currentb ID(on) VDS = 5 V, VGS = 10 V Ch 1 Ch-2 30 A VGS = 10 V, ID = 9.6 A Ch-1 0.0095 0.012 Drain Source On State Resistanceb rDS( ) VGS = 10 V, ID = 13.5 A Ch 1 Ch-2 0.007 0.010 W Drain-Source On-State Resistanceb rDS(on) VGS = 4.5 V, ID = 7.8 A Ch-1 0.0135 0.0175 W VGS = 4.5 V, ID = 12.8 A Ch 1 Ch-2 0.0085 0.0115 Forward Transconductanceb gf VDS = 15 V, ID = 9.6 A Ch-1 25 S Forward Transconductanceb gfs VDS = 15 V, ID = 13.5 A Ch 1 Ch-2 38 S Diode Forward Voltageb VSD IS = 1.8 A, VGS = 0 V Ch-1 0.74 1.1 V Diode Forward Voltageb VSD IS = 2.73 A, VGS = 0 V Ch 1 Ch-2 0.485 0.53 V Dynamica Total Gate Charge Qg Ch-1 10 15 Total Gate Charge Qg Channel-1 Ch-2 17 25 Gate Source Charge Q Channel 1 VDS = 10 V, VGS = 4.5 V, ID = 9.6 A Ch-1 3.3 nC Gate-Source Charge Qgs Channel-2 Ch 1 Ch-2 4.5 nC Gate Drain Charge Q d Channel 2 VDS = 10 V, VGS = 4.5 V, ID = -13.5 A Ch-1 3.1 Gate-Drain Charge Qgd Ch 1 Ch-2 4.5 Gate Resistance R f = 1 MHz Ch-1 0.45 0.9 1.35 W Gate Resistance Rg f = 1 MHz Ch 1 Ch-2 0.7 1.4 2.1 W Turn On Delay Time td( ) Ch-1 15 25 Turn-On Delay Time td(on) Channel 1 Ch 1 Ch-2 24 35 Rise Time t Channel-1 VDD = 01 V, RL = 10 W Ch-1 16 25 Rise Time tr VDD = 01 V, RL = 10 W ID ^ 1 A, VGEN = 10 V, RG = 6 W Ch 1 Ch-2 22 35 Turn Off Delay Time td( ff) Channel-2 Ch-1 42 65 ns Turn-Off Delay Time td(off) Channel-2 VDD = 01 V, RL = 15 W I ^ 1 A V 10 V R 6 W Ch 1 Ch-2 68 100 ns Fall Time tf DD L ID ^ 1 A, VGEN = 10 V, RG = 6 W Ch-1 16 25 Fall Time tf Ch 1 Ch-2 19 30 Source Drain Reverse Recovery Time t IF = 1.8 A, di/dt = 100 A/ms Ch-1 35 60 Source-Drain Reverse Recovery Time trr IF = 2.73 A, di/dt = 100 mA/ms Ch 1 Ch-2 38 65 Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. SCHOTTKY SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max Unit Forward Voltage Drop VF IF = 3 A 0.485 0.53 V Forward Voltage Drop VF IF = 3 A, TJ = 125_C 0.42 0.42 V Vr = 20 V 0.008 0.100 Maximum Reverse Leakage Current Irm Vr = 20 V, TJ = 75_C 0.4 5 mA Maximum Reverse Leakage Current Irm Vr = -20 V, TJ = 125_C 6.5 20 mA Junction Capacitance CT Vr = 15 V 102 pF |
유사한 부품 번호 - SI4340DY-T1 |
|
유사한 설명 - SI4340DY-T1 |
|
|
|
링크 URL |
| 개인정보취급방침 |
| ALLDATASHEET.CO.KR |
| ALLDATASHEET 가 귀하에 도움이 되셨나요? [ DONATE ] |
Alldatasheet는? | 광고문의 | 운영자에게 연락하기 | 개인정보취급방침 | 링크교환 | 제조사별 검색 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
Korean ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
