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STGIPS10K60A2 데이터시트(PDF) 11 Page - STMicroelectronics |
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11 / 18 page DocID025667 Rev 3 11/18 STGIPS10K60A2 Electrical characteristics 18 Minimum recommended dead time (DT) between low and high side logic input: 1 µs. Figure 7. Maximum IC(RMS) current vs. switching frequency (1) Figure 8. Maximum IC(RMS) current vs. fSINE (1) 1. Simulated curves refer to typical IGBT parameters and maximum Rthj-c. V PN= 300 V, Modulation index = 0.8, PF = 0.6, T j= 150°C, f SINE = 60 Hz TC = 100°C TC = 80°C IC (RMS) 6 6 fsw(kHz) (A) 410 8 10 12 12 814 16 AM03801v1 fsw = 12 kHz fsw = 20 kHz fsw = 16 kHz V PN= 300 V, Modulation index = 0.8, PF = 0.6, T j = 150°C, Tc = 100 °C IC (RMS) 5 4 fSINE(Hz) (A) 1 10 6 7 8 AM03802v1 Figure 9. Dead time and interlocking definition DT DT DT LIN HIN LVG HVG AM03794v1 |
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