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STGW20V60DF 데이터시트(PDF) 1 Page - STMicroelectronics

부품명 STGW20V60DF
상세설명  Low thermal resistance
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
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This is information on a product in full production.
June 2013
DocID024360 Rev 3
1/23
23
STGB20V60DF, STGP20V60DF,
STGW20V60DF, STGWT20V60DF
600 V, 20 A very high speed
trench gate field-stop IGBT
Datasheet - production data
Figure 1. Internal schematic diagram
Features
• Maximum junction temperature: T
J
= 175 °C
• Very high speed switching series
• Tail-less switching off
• Low saturation voltage: V
CE(sat)
= 1.8 V (typ.)
@ I
C
= 20 A
• Tight parameters distribution
• Safe paralleling
• Low thermal resistance
• Very fast soft recovery antiparallel diode
• Lead free package
Applications
• Photovoltaic inverters
• Uninterruptible power supply
• Welding
• Power factor correction
• Very high frequency converters
Description
This device is an IGBT developed using an
advanced proprietary trench gate and field stop
structure. The device is part of the "V" series of
IGBTs, which represent an optimum compromise
between conduction and switching losses to
maximize the efficiency of very high frequency
converters. Furthermore, a positive V
CE(sat)
temperature coefficient and very tight parameter
distribution result in safer paralleling operation.
TO-247
TO-3P
TO-220
D²PAK
1
2
3
TAB
1
2
3
1
2
3
TAB
1
3
TAB
Table 1. Device summary
Order code
Marking
Package
Packaging
STGB20V60DF
GB20V60DF
D²PAK
Tape and reel
STGP20V60DF
GP20V60DF
TO-220
Tube
STGW20V60DF
GW20V60DF
TO-247
Tube
STGWT20V60DF
GWT20V60DF
TO-3P
Tube
www.st.com


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