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STGFW40V60F 데이터시트(PDF) 5 Page - STMicroelectronics

부품명 STGFW40V60F
상세설명  Trench gate field-stop IGBT, V series 600 V, 40 A very high speed
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
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STGFW40V60F 데이터시트(HTML) 5 Page - STMicroelectronics

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STGB40V60F, STGFW40V60F, STGP40V60F, STGW40V60F
Electrical characteristics
Table 6. Switching characteristics (inductive load)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
(1)
Turn-on delay time
VCE = 400 V, IC = 40 A,
RG = 10 Ω, VGE = 15 V,
see Figure 27
-52-
ns
tr
(1)
Current rise time
-
17
-
ns
(di/dt)on
(1)
Turn-on current slope
-
1850
-
A/µs
td(off)
Turn-off delay time
-
208
-
ns
tf
Current fall time
-
20
-
ns
Eon
(1)
1.
Energy losses include reverse recovery of the external diode. The diode is the same of the co-packed
STGW40V60DF.
Turn-on switching losses
-
456
-
µJ
Eoff
(2)
2.
Turn-off losses include also the tail of the collector current.
Turn-off switching losses
-
411
-
µJ
Ets
Total switching losses
-
867
-
µJ
td(on)
(1)
Turn-on delay time
VCE = 400 V, IC = 40 A,
RG = 10 Ω, VGE = 15 V,
TJ = 175 °C, see Figure 27
-52-
ns
tr
(1)
Current rise time
-
21
-
ns
(di/dt)on
(1)
Turn-on current slope
-
1538
-
A/µs
td(off)
Turn-off delay time
-
220
-
ns
tf
Current fall time
-
21
-
ns
Eon
(1)
Turn-on switching losses
-
1330
-
µJ
Eoff
(2)
Turn-off switching losses
-
560
-
µJ
Ets
Total switching losses
-
1890
-
µJ


유사한 부품 번호 - STGFW40V60F

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유사한 설명 - STGFW40V60F

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