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STGW15H120DF2 데이터시트(PDF) 5 Page - STMicroelectronics |
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STGW15H120DF2 데이터시트(HTML) 5 Page - STMicroelectronics |
5 / 18 page DocID023751 Rev 5 5/18 STGW15H120DF2, STGWA15H120DF2 Electrical characteristics 18 Table 6. IGBT switching characteristics (inductive load) Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) Turn-on delay time VCE = 600 V, IC = 15 A, RG = 10 Ω, VGE = 15 V, see Figure 28 -23 - ns tr Current rise time - 7.4 - ns (di/dt)on Turn-on current slope - 1621 - A/µs td(off) Turn-off delay time 111 - ns tf Current fall time - 111 - ns Eon (1) 1. Energy losses include reverse recovery of the external diode. Turn-on switching losses - 0.38 - mJ Eoff (2) 2. Turn-off losses include also the tail of the collector current. Turn-off switching losses - 0.37 - mJ Ets Total switching losses - 0.75 - mJ td(on) Turn-on delay time VCE = 600 V, IC = 15 A, RG = 10 Ω, VGE = 15 V, TJ = 175 °C, see Figure 28 - 23.5 - ns tr Current rise time - 8 - ns (di/dt)on Turn-on current slope - 1525 - A/µs td(off) Turn-off delay time - 118 - ns tf Current fall time - 253 - ns Eon (1) Turn-on switching losses - 0.65 - mJ Eoff (2) Turn-off switching losses - 0.93 - mJ Ets Total switching losses - 1.58 - mJ tsc Short-circuit withstand time VCE = 600 V, VGE = 15 V, TJ = 150 °C, 5- µs Table 7. Diode switching characteristics (inductive load) Symbol Parameter Test conditions Min. Typ. Max. Unit trr Reverse recovery time IF = 15 A, VR = 600 V, di/dt=1000 A/µs , VGE = 15 V, see Figure 28 -231 - ns Qrr Reverse recovery charge - 0.72 - µC Irrm Reverse recovery current - 14.5 - A dIrr/ /dt Peak rate of fall of reverse recovery current during tb -1200 - A/µs Err Reverse recovery energy - 0.4 - mJ trr Reverse recovery time IF = 15 A, VR = 600 V, di/dt=1000 A/µs , VGE = 15 V, TJ = 175 °C, see Figure 28 -414 - ns Qrr Reverse recovery charge - 2.2 - µC Irrm Reverse recovery current - 21.5 - A dIrr/ /dt Peak rate of fall of reverse recovery current during tb -632 - A/µs Err Reverse recovery energy - 1.3 - mJ |
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