전자부품 데이터시트 검색엔진
  Korean  ▼
ALLDATASHEET.CO.KR

X  

STGW15H120DF2 데이터시트(PDF) 5 Page - STMicroelectronics

부품명 STGW15H120DF2
상세설명  Trench gate field-stop IGBT, H series 1200 V, 15 A high speed
Download  18 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGW15H120DF2 데이터시트(HTML) 5 Page - STMicroelectronics

  STGW15H120DF2 Datasheet HTML 1Page - STMicroelectronics STGW15H120DF2 Datasheet HTML 2Page - STMicroelectronics STGW15H120DF2 Datasheet HTML 3Page - STMicroelectronics STGW15H120DF2 Datasheet HTML 4Page - STMicroelectronics STGW15H120DF2 Datasheet HTML 5Page - STMicroelectronics STGW15H120DF2 Datasheet HTML 6Page - STMicroelectronics STGW15H120DF2 Datasheet HTML 7Page - STMicroelectronics STGW15H120DF2 Datasheet HTML 8Page - STMicroelectronics STGW15H120DF2 Datasheet HTML 9Page - STMicroelectronics Next Button
Zoom Inzoom in Zoom Outzoom out
 5 / 18 page
background image
DocID023751 Rev 5
5/18
STGW15H120DF2, STGWA15H120DF2
Electrical characteristics
18
Table 6. IGBT switching characteristics (inductive load)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
Turn-on delay time
VCE = 600 V, IC = 15 A,
RG = 10 Ω, VGE = 15 V,
see Figure 28
-23
-
ns
tr
Current rise time
-
7.4
-
ns
(di/dt)on
Turn-on current slope
-
1621
-
A/µs
td(off)
Turn-off delay time
111
-
ns
tf
Current fall time
-
111
-
ns
Eon
(1)
1.
Energy losses include reverse recovery of the external diode.
Turn-on switching losses
-
0.38
-
mJ
Eoff
(2)
2.
Turn-off losses include also the tail of the collector current.
Turn-off switching losses
-
0.37
-
mJ
Ets
Total switching losses
-
0.75
-
mJ
td(on)
Turn-on delay time
VCE = 600 V, IC = 15 A,
RG = 10 Ω, VGE = 15 V,
TJ = 175 °C, see Figure 28
-
23.5
-
ns
tr
Current rise time
-
8
-
ns
(di/dt)on
Turn-on current slope
-
1525
-
A/µs
td(off)
Turn-off delay time
-
118
-
ns
tf
Current fall time
-
253
-
ns
Eon
(1)
Turn-on switching losses
-
0.65
-
mJ
Eoff
(2)
Turn-off switching losses
-
0.93
-
mJ
Ets
Total switching losses
-
1.58
-
mJ
tsc
Short-circuit withstand time
VCE = 600 V, VGE = 15 V,
TJ = 150 °C,
5-
µs
Table 7. Diode switching characteristics (inductive load)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
trr
Reverse recovery time
IF = 15 A, VR = 600 V,
di/dt=1000 A/µs
,
VGE = 15 V,
see Figure 28
-231
-
ns
Qrr
Reverse recovery charge
-
0.72
-
µC
Irrm
Reverse recovery current
-
14.5
-
A
dIrr/ /dt
Peak rate of fall of reverse
recovery current during tb
-1200
-
A/µs
Err
Reverse recovery energy
-
0.4
-
mJ
trr
Reverse recovery time
IF = 15 A, VR = 600 V,
di/dt=1000 A/µs
,
VGE = 15 V, TJ = 175 °C,
see Figure 28
-414
-
ns
Qrr
Reverse recovery charge
-
2.2
-
µC
Irrm
Reverse recovery current
-
21.5
-
A
dIrr/ /dt
Peak rate of fall of reverse
recovery current during tb
-632
-
A/µs
Err
Reverse recovery energy
-
1.3
-
mJ


유사한 부품 번호 - STGW15H120DF2

제조업체부품명데이터시트상세설명
logo
STMicroelectronics
STGW15H120F2 STMICROELECTRONICS-STGW15H120F2 Datasheet
801Kb / 17P
   Trench gate field-stop IGBT, H series 1200 V, 15 A high speed
April 2015 Rev 5
More results

유사한 설명 - STGW15H120DF2

제조업체부품명데이터시트상세설명
logo
STMicroelectronics
STGW15H120F2 STMICROELECTRONICS-STGW15H120F2 Datasheet
801Kb / 17P
   Trench gate field-stop IGBT, H series 1200 V, 15 A high speed
April 2015 Rev 5
STGW40H120F2 STMICROELECTRONICS-STGW40H120F2 Datasheet
1,002Kb / 17P
   Trench gate field-stop IGBT, H series 1200 V, 40 A high speed
March 2015 Rev 3
STGW40H120DF2 STMICROELECTRONICS-STGW40H120DF2 Datasheet
821Kb / 17P
   Trench gate field-stop IGBT, H series 1200 V, 40 A high speed
June 2016 Rev 5
STGW25H120F2 STMICROELECTRONICS-STGW25H120F2 Datasheet
957Kb / 17P
   Trench gate field-stop IGBT, H series 1200 V, 25 A high speed
March 2015 Rev 4
STGW25H120DF2 STMICROELECTRONICS-STGW25H120DF2 Datasheet
737Kb / 17P
   Trench gate field-stop IGBT, H series 1200 V, 25 A high speed
March 2015 Rev 4
STGWT15H60F STMICROELECTRONICS-STGWT15H60F Datasheet
845Kb / 15P
   Trench gate field-stop IGBT, H series 600 V, 15 A high speed
February 2017
STGB15H60DF STMICROELECTRONICS-STGB15H60DF Datasheet
1Mb / 23P
   Trench gate field-stop IGBT, H series 600 V, 15 A high speed
October 2013 Rev 2
logo
Fairchild Semiconductor
FGH15T120SMD FAIRCHILD-FGH15T120SMD Datasheet
257Kb / 9P
   1200 V, 15 A Field Stop Trench IGBT
logo
STMicroelectronics
STGB7H60DF STMICROELECTRONICS-STGB7H60DF Datasheet
985Kb / 25P
   Trench gate field-stop IGBT, H series 600 V, 7 A high speed
June 2015 Rev 2
STGB5H60DF STMICROELECTRONICS-STGB5H60DF Datasheet
872Kb / 30P
   Trench gate field-stop IGBT, H series 600 V, 5 A high speed
May 2015 Rev 3
More results


Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18


데이터시트 다운로드

Go To PDF Page


링크 URL




개인정보취급방침
ALLDATASHEET.CO.KR
ALLDATASHEET 가 귀하에 도움이 되셨나요?  [ DONATE ] 

Alldatasheet는?   |   광고문의   |   운영자에게 연락하기   |   개인정보취급방침   |   링크교환   |   제조사별 검색
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com