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STGW60H65DFB 데이터시트(PDF) 9 Page - STMicroelectronics |
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STGW60H65DFB 데이터시트(HTML) 9 Page - STMicroelectronics |
9 / 19 page DocID024365 Rev 7 9/19 STGW60H65DFB, STGWA60H65DFB, STGWT60H65DFB Electrical characteristics Figure 20. Reverse recovery current vs. diode current slope Figure 21. Reverse recovery time vs. diode current slope Irm (A) 70 30 0 0 di/dt(A/μs) 500 1000 1500 Vr= 400V, IF= 60A TJ= 175°C 2000 2500 50 60 40 20 10 80 TJ= 25°C GIPD280820131635FSR trr (ns) 150 0 0 di/dt(A/μs) 500 1000 1500 Vr= 400V, IF= 60A TJ= 175°C 2000 2500 250 200 100 50 TJ= 25°C 300 GIPD280820131643FSR Figure 22. Reverse recovery charge vs. diode current slope Figure 23. Reverse recovery energy vs. diode current slope Qrr (nC) 1500 0 0 di/dt(A/μs) 500 1000 1500 Vr= 400V, IF= 60A TJ= 175°C 2000 2500 2500 2000 1000 500 TJ= 25°C 3000 3500 4000 GIPD280820131650FSR Err (μJ) 300 0 0 di/dt(A/μs) 500 1000 1500 Vr= 400V, IF= 60A TJ= 175°C 2000 2500 500 400 200 100 TJ= 25°C 600 700 800 GIPD280820131656FSR Figure 24. Capacitance variations Figure 25. Collector current vs. switching frequency C(pF) 1000 100 10 0.1 VCE(V) 110 10000 Cies Coes Cres 100 f = 1 MHz GIPD280820131518FSR 20 40 60 80 100 110 Ic (A) f (kHz) G Ω rectangular current shape, (duty cycle=0.5, V CC = 400V, R =10 , V GE = 0/15 V, TJ =175°C) Tc=80°C Tc=100 °C GIPD080120151105FSR |
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