전자부품 데이터시트 검색엔진 |
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2SA1036 데이터시트(PDF) 2 Page - Galaxy Semi-Conductor Holdings Limited |
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2SA1036 데이터시트(HTML) 2 Page - Galaxy Semi-Conductor Holdings Limited |
2 / 4 page Production specification Silicon Epitaxial Planar Transistor 2SA1036 C012 www.gmicroelec.com Rev.A 2 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-100μA,IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 -32 V Emitter-base breakdown voltage V(BR)EBO IE=-100μA,IC=0 -5 V Collector cut-off current ICBO VCB=-20V,IE=0 -1 μA Emitter cut-off current IEBO VEB=-4V,IC=0 -1 μA DC current gain hFE VCE=-3V,IC=-10mA 82 390 Collector-emitter saturation voltage VCE(sat) IC=-100mA, IB=-10mA -0.4 V Transition frequency fT VCE=-5V, IC=-20mA f=100MHz 200 MHz Collector output capacitance Cob VCB=-10V,IE=0,f=1MHz 7 pF CLASSIFICATION OF hFE(1) Rank P Q R Range 82-180 120-270 180-390 TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified |
유사한 부품 번호 - 2SA1036_12 |
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유사한 설명 - 2SA1036_12 |
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