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STU16N60M2 데이터시트(PDF) 5 Page - STMicroelectronics |
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STU16N60M2 데이터시트(HTML) 5 Page - STMicroelectronics |
5 / 16 page STP16N60M2, STU16N60M2 Electrical characteristics DocID027198 Rev 1 5/16 Table 8: Source-drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD Source-drain current - 12 A ISDM (1) Source-drain current (pulsed) - 48 A VSD (2) Forward on voltage VGS = 0 V, ISD = 12 A - 1.6 V trr Reverse recovery time ISD = 12 A, di/dt = 100 A/µs, VDD = 60 V (see Figure 18: "Test circuit for inductive load switching and diode recovery times") - 316 ns Qrr Reverse recovery charge - 3.25 µC IRRM Reverse recovery current - 20.5 A trr Reverse recovery time ISD = 12 A, di/dt = 100 A/µs, VDD = 60 V, Tj = 150 °C (see Figure 18: "Test circuit for inductive load switching and diode recovery times") - 454 ns Qrr Reverse recovery charge - 4.8 µC IRRM Reverse recovery current - 21 A Notes: (1) Pulse width is limited by safe operating area. (2) Pulse test: pulse duration = 300 µs, duty cycle 1.5%. |
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