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10RIA 데이터시트(Datasheet) 3 Page - International Rectifier

부품명 10RIA
상세내용  MEDIUM POWER THYRISTORS
PDF  8 Pages
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제조사  IRF [International Rectifier]
홈페이지  http://www.irf.com
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10RIA Series
Bulletin I2405 rev. A 07/00
3
www.irf.com
dv/dt
Max. critical rate of rise of
100
TJ = TJ max. linear to 100% rated VDRM
off-state voltage
300 (*)
TJ = TJ max. linear to 67% rated VDRM
V/µs
Parameter
10RIA
Units Conditions
Blocking
P
GM
Maximum peak gate power
8.0
T
J = TJ max.
P
G(AV)
Maximum average gate power
2.0
I
GM
Max. peak positive gate current
1.5
A
T
J = TJ max.
-V
GM
Maximum peak negative
10
V
T
J = TJ max.
gate voltage
I
GT
DC gate current required
90
T
J = - 65°C
to trigger
60
mA
T
J =
25°C
35
T
J = 125°C
V
GT
DC gate voltage required
3.0
T
J = - 65°C
to trigger
2.0
V
T
J =
25°C
1.0
V
T
J =
125°C
I
GD
DC gate current not to trigger
2.0
mA
T
J = TJ max., VDRM = rated value
V
GD
DC gate voltage not to trigger
0.2
V
T
J = TJ max.
V
DRM = rated value
W
Max. required gate trigger current/
voltage are the lowest value which
will trigger all units 6V anode-to-
cathode applied
Max. gate current/ voltage not to
trigger is the max. value which
will not trigger any unit with rated
V
DRM anode-to-cathode applied
Parameter
10RIA
Units Conditions
Triggering
di/dt
Max. rate of rise of turned-on
T
J = TJ max., VDM = rated VDRM
current
VDRM ≤ 600V
200
A/µs
Gate pulse = 20V, 15
Ω, t
p = 6µs, tr = 0.1µs max.
VDRM ≤ 800V
180
I
TM = (2x rated di/dt) A
VDRM ≤ 1000V
160
VDRM ≤ 1600V
150
tgt
Typical turn-on time
0.9
T
J = 25°C,
at = rated V
DRM/VRRM, TJ = 125°C
trr
Typical reverse recovery time
4
µs
T
J = TJ max.,
I
TM = IT(AV), t
p > 200µs, di/dt = -10A/µs
tq
Typical turn-off time
110
T
J = TJ max., ITM = IT(AV), t
p > 200µs, VR = 100V,
di/dt = -10A/µs, dv/dt = 20V/µs linear to
67% V
DRM, gate bias 0V-100W
Parameter
10RIA
Units Conditions
Switching
(**) Available with: dv/dt = 1000V/µs, to complete code add S90 i.e. 10RIA120S90.
(*) tq = 10µsup to 600V, tq = 30µs up to 1600V available on special request.




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