SSM3J09FU datasheet(4/5 Pages) TOSHIBA

부품명	SSM3J09FU

상세설명	TOSHIBA Field Effect Transistor Silicon P Channel MOS Type

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제조업체	TOSHIBA [Toshiba Semiconductor]

홈페이지	http://www.semicon.toshiba.co.jp/eng

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4 / 5 page

SSM3J09FU

2002-01-16

4

Ambient temperature Ta (°C)

Vth – Ta

Drain-Source voltage VDS (V)

IDR – VDS

Drain-Source voltage VDS (V)

C – VDS

Drain current ID (mA)

t – ID

Ambient temperature Ta (°C)

PD – Ta

-400

-200

0

0.4

1

1.4

-100

-300

-500

Common Source

VGS = 0

Ta

= 25°C

0.2

0.6

0.8

1.2

S

G

IDR

D

Mounted on FR4 board

(25.4 mm

´ 25.4 mm ´1.6 t

Cu pad: 0.6 mm

2

´ 3) Figure 1

0

50

100

0

160

100

60

20

80

40

120

150

200

140

1

10

-0.1

-1

100

-10

-100

500

Common Source

VGS = 0 V

f

= 1 MHz

Ta

= 25°C

Coss

Crss

Ciss

10

100

-1

-10

1000

-100

-1000

5000

Common Source

VDD = -5 V

VGS = 0~-4 V

Ta

= 25°C

toff

tf

ton

tr

-2

-1.8

-1.2

-0.8

-0.4

0

-25

0

25

75

100

150

-1.6

-1.4

-1

-0.6

-0.2

Common Source

ID = -0.1 mA

VDS = -5 V

50

125

유사한 부품 번호 - SSM3J09FU

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SSM3J09FU 데이터시트(PDF) 4 Page - Toshiba Semiconductor

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유사한 부품 번호 - SSM3J09FU

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