전자부품 데이터시트 검색엔진 |
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2SJ619 데이터시트(PDF) 2 Page - Toshiba Semiconductor |
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2SJ619 데이터시트(HTML) 2 Page - Toshiba Semiconductor |
2 / 6 page 2SJ619 2002-08-09 2 Electrical Characteristics (Ta ==== 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±16 V, VDS = 0 V ¾ ¾ ±10 mA Drain cut-OFF current IDSS VDS = -100 V, VGS = 0 V ¾ ¾ -100 mA Drain-source breakdown voltage V (BR) DSS ID = -10 mA, VGS = 0 V -100 ¾ ¾ V Gate threshold voltage Vth VDS = -10 V, ID = -1 mA -0.8 ¾ -2.0 V VGS = -4 V, ID = -6 A ¾ 0.25 0.32 Drain-source ON resistance RDS (ON) VGS = -10 V, ID = -6 A 0.15 0.21 W Forward transfer admittance ïYfsï VDS = -10 V, ID = -6 A 4.5 7.7 ¾ S Input capacitance Ciss ¾ 1100 ¾ Reverse transfer capacitance Crss ¾ 210 ¾ Output capacitance Coss VDS = -10 V, VGS = 0 V, f = 1 MHz ¾ 440 ¾ pF Rise time tr ¾ 18 ¾ Turn-ON time ton ¾ 30 ¾ Fall time tf ¾ 18 ¾ Switching time Turn-OFF time toff ¾ 65 ¾ ns Total gate charge (gate-source plus gate-drain) Qg ¾ 48 ¾ Gate-source charge Qgs ¾ 29 ¾ Gate-drain (“miller”) charge Qgd VDD ~- -80 V, VGS = -10 V, ID = -16 A ¾ 19 ¾ nC Source-Drain Ratings and Characteristics (Ta ==== 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Continuous drain reverse current (Note 1) IDR ¾ ¾ ¾ -16 A Pulse drain reverse current (Note 1) IDRP ¾ ¾ ¾ -64 A Forward voltage (diode) VDSF IDR = -16 A, VGS = 0 V ¾ ¾ 1.7 V Reverse recovery time trr ¾ 160 ¾ ms Reverse recovery charge Qrr IDR = -16 A, VGS = 0 V, dIDR/dt = 50 A/ms ¾ 0.5 ¾ mC Marking ※ Lot Number Month (starting from alphabet A) Year (last number of the christian era) ※ Type J619 Duty <= 1%, tw = 10 ms -10 V 0 V VGS RL = 6.25 W VDD ~- -50 V ID = -8 A VOUT |
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