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2SJ619 데이터시트(PDF) 2 Page - Toshiba Semiconductor

부품명 2SJ619
상세설명  TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2MOSV)
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제조업체  TOSHIBA [Toshiba Semiconductor]
홈페이지  http://www.semicon.toshiba.co.jp/eng
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2SJ619 데이터시트(HTML) 2 Page - Toshiba Semiconductor

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2SJ619
2002-08-09
2
Electrical Characteristics (Ta
==== 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±16 V, VDS = 0 V
¾
¾
±10
mA
Drain cut-OFF current
IDSS
VDS = -100 V, VGS = 0 V
¾
¾
-100
mA
Drain-source breakdown voltage
V (BR) DSS
ID = -10 mA, VGS = 0 V
-100
¾
¾
V
Gate threshold voltage
Vth
VDS = -10 V, ID = -1 mA
-0.8
¾
-2.0
V
VGS = -4 V, ID = -6 A
¾
0.25
0.32
Drain-source ON resistance
RDS (ON)
VGS = -10 V, ID = -6 A
0.15
0.21
W
Forward transfer admittance
ïYfsï
VDS = -10 V, ID = -6 A
4.5
7.7
¾
S
Input capacitance
Ciss
¾
1100
¾
Reverse transfer capacitance
Crss
¾
210
¾
Output capacitance
Coss
VDS = -10 V, VGS = 0 V, f = 1 MHz
¾
440
¾
pF
Rise time
tr
¾
18
¾
Turn-ON time
ton
¾
30
¾
Fall time
tf
¾
18
¾
Switching time
Turn-OFF time
toff
¾
65
¾
ns
Total gate charge
(gate-source plus gate-drain)
Qg
¾
48
¾
Gate-source charge
Qgs
¾
29
¾
Gate-drain (“miller”) charge
Qgd
VDD ~- -80 V, VGS = -10 V, ID = -16 A
¾
19
¾
nC
Source-Drain Ratings and Characteristics (Ta
==== 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current (Note 1)
IDR
¾
¾
¾
-16
A
Pulse drain reverse current
(Note 1)
IDRP
¾
¾
¾
-64
A
Forward voltage (diode)
VDSF
IDR = -16 A, VGS = 0 V
¾
¾
1.7
V
Reverse recovery time
trr
¾
160
¾
ms
Reverse recovery charge
Qrr
IDR = -16 A, VGS = 0 V,
dIDR/dt = 50 A/ms
¾
0.5
¾
mC
Marking
Lot Number
Month (starting from alphabet A)
Year
(last number of the christian era)
Type
J619
Duty <= 1%, tw = 10 ms
-10 V
0 V
VGS
RL = 6.25 W
VDD ~- -50 V
ID = -8 A
VOUT


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