GATE CHARACTERISTICS (maximum values)

Symbol

Parameter

Value

Unit

Rth (j-a)

Junction to ambient

60

°C/W

Rth (j-c) DC Junction to case for DC

BTA

3.9

°C/W

BTB

3.1

Rth (j-c) AC Junction to case for 360

° conduction angle

( F= 50 Hz)

BTA

2.9

°C/W

BTB

2.3

Symbol

Test Conditions

Quadrant

Suffix

Unit

BC

IGT

VD=12V

(DC)

RL=33Ω

Tj=25

°C

I-II-III

MAX

50

25

mA

IV

MAX

100

50

VGT

VD=12V

(DC)

RL=33Ω

Tj=25

°C

I-II-III-IV

MAX

1.5

V

VGD

VD=VDRM RL=3.3kΩ

Tj=110

°C

I-II-III-IV

MIN

0.2

V

tgt

VD=VDRM IG = 500mA

dIG/dt = 3A/µs

Tj=25

°C

I-II-III-IV

TYP

2

µs

IL

IG=1.2 IGT

Tj=25

°C

I-III-IV

TYP

40

20

mA

II

70

35

IH *IT= 500mA gate open

Tj=25

°C

MAX

50

25

mA

VTM *ITM= 14A tp= 380µs

Tj=25

°C

MAX

1.5

V

IDRM

IRRM

VDRM Rated

VRRM Rated

Tj=25

°C

MAX

0.01

mA

Tj=110

°C

MAX

0.5

dV/dt *

Linear slope up to VD=67%VDRM

gate open

Tj=110

°C

MIN

250

100

V/

µs

(dV/dt)c *

(dI/dt)c = 4.4A/ms

Tj=110

°C

MIN

10

5

V/

µs

* For either polarity of electrode A2 voltage with reference to electrode A1.

PG (AV) =1W

PGM = 10W (tp = 20 µs)

IGM =4A (tp =20 µs)

VGM = 16V (tp = 20 µs).

ELECTRICAL CHARACTERISTICS

THERMAL RESISTANCES

BTA10 B/C / BTB10 B/C

2/5

S

S