BC856 datasheet(2/9 Pages) VISHAY

부품명	BC856

상세설명	Small Signal Transistors (PNP)

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Document Number 85135

Rev. 1.2, 08-Sep-04

VISHAY

BC856 to BC859

Vishay Semiconductors

Absolute Maximum Ratings

Tamb = 25 °C, unless otherwise specified

1) Device on fiberglass substrate, see layout on third page.

Maximum Thermal Resistance

1) Device on fiberglass substrate, see layout on third page.

Electrical DC Characteristics

Parameter

Test condition

Part

Symbol

Value

Unit

Collector - base voltage

BC856

- VCBO

80

V

BC857

- VCBO

50

V

BC858

- VCBO

30

V

BC859

- VCBO

30

V

Collector - emitter voltage

(base shorted)

BC856

- VCES

80

V

BC857

- VCES

50

V

BC858

- VCES

30

V

BC859

- VCES

30

V

Collector - emitter voltage

(base open)

BC856

- VCEO

65

V

BC857

- VCEO

45

V

BC858

- VCEO

30

V

BC859

- VCEO

30

V

Emitter - base voltage

- VEBO

5V

Collector current

- IC

100

mA

Peak colector current

- ICM

200

mA

Peak base current

- IBM

200

mA

Peak emitter current

IEM

200

mA

Power dissipation

Tamb = 25 °C

Ptot

3101)

mW

Parameter

Test condition

Symbol

Value

Unit

Thermal resistance junction to

ambient air

RθJA

3201)

°C/W

Thermal resistance junction to

substrate backside

RθSB

4501)

°C/W

Junction temperature

Tj

150

°C

Storage temperature range

TS

- 65 to + 150

°C

Parameter

Test condition

Part

Symbol

Min

Typ

Max

Unit

Small signal current gain

(current gain group A)

- VCE = 5 V, - IC = 2 mA, f = 1 kHz

hfe

220

Small signal current gain

(current gain group B)

- VCE = 5 V, - IC = 2 mA, f = 1 kHz

hfe

330

Small signal current gain

(current gain group C)

- VCE = 5 V, - IC = 2 mA, f = 1 kHz

hfe

600

Input impedance (current gain

group A)

- VCE = 5 V, - IC = 2 mA, f = 1 kHz

hie

1.6

2.7

4.5

k

Ω

Input impedance (current gain

group B)

- VCE = 5 V, - IC = 2 mA, f = 1 kHz

hie

3.2

4.5

8.5

k

Ω

Input impedance (current gain

group C)

- VCE = 5 V, - IC = 2 mA, f = 1 kHz

hie

68.7

15

k

Ω

Output admittance (current gain

group A)

- VCE = 5 V, - IC = 2 mA, f = 1 kHz

hoe

18

30

µS

유사한 부품 번호 - BC856

제조업체	부품명	데이터시트	상세설명
NXP Semiconductors	BC856	47Kb / 8P	PNP general purpose transistors 1999 Apr 12
Guangdong Kexin Industr...	BC856	1Mb / 3P	PNP Transistors
Weitron Technology	BC856	95Kb / 4P	General Purpose Transistor PNP Silicon
Jiangsu Changjiang Elec...	BC856	1Mb / 5P	SOT-23 Plastic-Encapsulate Transistors
Rectron Semiconductor	BC856	27Kb / 2P	SOT-23 - Power Transistor and Darlingtons

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유사한 설명 - BC856

제조업체	부품명	데이터시트	상세설명
Micro Commercial Compon...	DMMT3906	236Kb / 4P	PNP Small Signal Transistors
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	MPS2907A	39Kb / 3P	SMALL SIGNAL TRANSISTORS (PNP)
Micro Commercial Compon...	MMSTA92	204Kb / 2P	PNP Small Signal Transistors
Micro Commercial Compon...	MMST2907A	193Kb / 2P	PNP Small Signal Transistors
Vishay Siliconix	BCW61	40Kb / 3P	Small Signal Transistors (PNP) 09-May-02
General Semiconductor	MMBT3906	136Kb / 3P	SMALL SIGNAL TRANSISTORS (PNP)
General Semiconductor	MMBTA56	56Kb / 2P	Small Signal Transistors (PNP)

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BC856 데이터시트(PDF) 2 Page - Vishay Siliconix

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유사한 부품 번호 - BC856

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