전자부품 데이터시트 검색엔진 |
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2SK3417 데이터시트(PDF) 2 Page - Toshiba Semiconductor |
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2SK3417 데이터시트(HTML) 2 Page - Toshiba Semiconductor |
2 / 6 page 2SK3417 2002-08-12 2 Electrical Characteristics (Ta ==== 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±25 V, VDS = 0 V ¾ ¾ ±10 mA Drain-source breakdown voltage V (BR) GSS IG = ±100 mA, VDS = 0 V ±30 ¾ ¾ V Drain cut-OFF current IDSS VDS = 500 V, VGS = 0 V ¾ ¾ 100 mA Drain-source breakdown voltage V (BR) DSS ID = 10 mA, VGS = 0 V 500 ¾ ¾ V Gate threshold voltage Vth VDS = 10 V, ID = 1 mA 2.0 ¾ 4.0 V Drain-source ON resistance RDS (ON) VGS = 10 V, ID = 2.5 A ¾ 1.6 1.8 W Forward transfer admittance ïYfsï VDS = 10 V, ID = 2.5 A 2.5 4.0 ¾ S Input capacitance Ciss ¾ 780 ¾ Reverse transfer capacitance Crss ¾ 60 ¾ Output capacitance Coss VDS = 10 V, VGS = 0 V, f = 1 MHz ¾ 200 ¾ pF Rise time tr ¾ 12 ¾ Turn-ON time ton ¾ 25 ¾ Fall time tf ¾ 15 ¾ Switching time Turn-OFF time toff ¾ 60 ¾ ns Total gate charge (gate-source plus gate-drain) Qg ¾ 17 ¾ Gate-source charge Qgs ¾ 11 ¾ Gate-drain (“miller”) charge Qgd VDD ~- 400 V, VGS = 10 V, ID = 5 A ¾ 6 ¾ nC Source-Drain Ratings and Characteristics (Ta ==== 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Continuous drain reverse current (Note 1) IDR ¾ ¾ ¾ 5 A Pulse drain reverse current (Note 1) IDRP ¾ ¾ ¾ 20 A Forward voltage (diode) VDSF IDR = 5 A, VGS = 0 V ¾ ¾ -1.7 V Reverse recovery time trr ¾ 60 ¾ ns Reverse recovery charge Qrr IDR = 5 A, VGS = 0 V, dIDR/dt = 100 A/ms ¾ 0.1 ¾ mC Marking ※ Type K3417 ※ Lot Number Month (starting from alphabet A) Year (last number of the christian era) Duty <= 1%, tw = 10 ms 0 V 10 V VGS RL = 90 W VDD ~- 225 V ID = 2.5 A VOUT |
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