전자부품 데이터시트 검색엔진 |
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STG3220 데이터시트(PDF) 8 Page - STMicroelectronics |
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STG3220 데이터시트(HTML) 8 Page - STMicroelectronics |
8 / 23 page Electrical characteristics STG3220 8/23 Doc ID 15647 Rev 1 Symbol Parameter VCC (V) Test conditions Value Unit TA = 25 °C -40 to 85 °C Min Typ Max Min Max ∆RON ON resistance match between channels(1) 1.8 VS at RON max IS = 8 mA –– – – – Ω 2.7 – – – – – 3.0 – 0.1 – – – 3.7 – – – – – 4.3 – – – – – RFLAT ON resistance flatness(2) 1.8 VS = 0 V to 0.4 V IS = 8 mA –4.5 – – – Ω 1.8 VS = 0 V to VCC IS = 8 mA –9.0 – – – 2.7 – 2.2 – – – 3.0 – 1.8 – – – 3.7 – 1.6 – – – 4.3 – 1.6 – – – IOFF OFF state leakage current (Sn), (D) 4.3 VS = 0.3 or 4 V -20 – 20 -100 100 nA IIN Input leakage current 0 to 4.3 VSEL = 0 to 4.3 V -0.2 – 0.2 -1.0 1.0 µ A ICC Quiescent supply current 1.65 to 4.3 VSEL = VCC or GND -0.2 0.2 -1.0 1.0 µ A ICCLV Quiescent supply current for low voltage driving 4.3 VSEL = 1.65 V – ±37 ±50 – ±100 µ A VSEL = 1.80 V – ±33 ±40 – ±50 VSEL = 2.60 V – ±11 ±20 – ±30 1. ΔR ON = max |mSN-nSN|, where m = 1, 2 and n = 1, 2, N = 1, 2 2. Flatness is defined as the difference between the maximum and minimum value of on-resistance as measured over the specified analog signal ranges. Table 6. DC specifications (continued) |
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