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SS52BF 데이터시트(PDF) 1 Page - Xian Semipower Electronic Technology Co., Ltd. |
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SS52BF 데이터시트(HTML) 1 Page - Xian Semipower Electronic Technology Co., Ltd. |
1 / 3 page Surface Mount Schottky Barrier Rectifier Reverse Voltage - 20 to 200V Forward Current - 5.0A FEATURES • Metal silicon junction, majority carrier conduction • For surface mounted applications • Low power loss, high efficiency • High forward surge current capability • For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications Absolute Maximum Ratings and Electrical characteristics Ratings at ambient temperature unless otherwise specified.Single phase, half wave, 60Hz resistive or inductive load, for capacitive load, derate by 20 % 25 °C PINNING PIN 1 2 DESCRIPTION Cathode Anode Top View Marking Code: S52B — S520B Simplified outline SMBF and symbol MECHANICAL DATA pprox. Weight: 57 • Case: SMBF • Terminals: Solderable per MIL-STD-750, Method 2026 • A mg / 0.002oz Maximum DC Blocking Voltage Parameter Maximum Repetitive Peak Reverse Voltage Maximum RMS voltage Maximum Average Forward Rectified Current Typical Junction Capacitance 20 40 V 14 28 V V 5.0 -55 ~ +150 A A V mA pF °C Units 20 40 Peak Forward Surge Current,8.3ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method) Max Instantaneous Forward Voltage at 5 A Maximum DC Reverse Current at Rated DC Reverse Voltage Operating Junction Temperature Range SS52BF SS54BF SS56BF SS58BF SS510BF SS512BF SS515BF SS520BF T = 25 °C a T =100 °C a VRRM VRMS VDC IF(AV) IFSM VF IR Cj Tj Symbols Tstg Storage Temperature Range 60 42 60 80 56 80 100 100 0.55 0.70 0.85 800 -55 ~ +150 °C 120 120 150 105 150 200 140 200 1.0 50 500 45 Typical Thermal Resistance RθJA °C/W 150 70 84 Page 1 of 3 SS52BF THRU SS520BF 1 2 (1) (2) Measured at 1 MHz and applied reverse voltage of 4 V D.C (2) (1) P.C.B. mounted with 2.0" X 2.0" (5 X 5 cm) copper pad areas. Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. 2016 Rev 1.0 |
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