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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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2SK3159 데이터시트(PDF) 2 Page - Renesas Technology Corp |
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2SK3159 데이터시트(HTML) 2 Page - Renesas Technology Corp |
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2 / 8 page  2SK3159 R07DS1357EJ0500 Rev.5.00 Page 2 of 7 Aug 02, 2016 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V(BR)DSS 150 — — V ID = 10 mA, VGS = 0 Gate to source breakdown voltage V(BR)GSS 20 — — V IG = 100 A, VDS = 0 Gate to source leak current IGSS — — 10 A VGS = 16 V, VDS = 0 Zero gate voltage drain current IDSS — — 10 A VDS = 150 V, VGS = 0 Gate to source cutoff voltage VGS(off) 1.0 — 2.5 V ID = 1 mA, VDS = 10 V Static drain to source on state resistance RDS(on) — 23 30 m ID = 25 A, VGS = 10 VNote4 RDS(on) — 28 42 m ID = 25 A, VGS = 4 V Note4 Forward transfer admittance |yfs| 30 50 — S ID = 25 A, VDS = 10 V Note4 Input capacitance Ciss — 4000 — pF VDS = 10 V, VGS = 0, f = 1 MHz Output capacitance Coss — 1650 — pF Reverse transfer capacitance Crss — 590 — pF Turn-on delay time td(on) — 30 — ns ID = 25 A, VGS = 10 V, RL = 1.2 Rise time tr — 280 — ns Turn-off delay time td(off) — 830 — ns Fall time tf — 450 — ns Body–drain diode forward voltage VDF — 0.95 — V IF = 50 A, VGS = 0 Body–drain diode reverse recovery time trr — 200 — ns IF = 50 A, VGS = 0 diF/ dt = 50 A/ s Note: 4. Pulse test |
유사한 부품 번호 - 2SK3159_16 |
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유사한 설명 - 2SK3159_16 |
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