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TC55VBM316AFTN55 데이터시트(PDF) 7 Page - Toshiba Semiconductor |
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TC55VBM316AFTN55 데이터시트(HTML) 7 Page - Toshiba Semiconductor |
7 / 15 page TC55VBM316AFTN/ASTN40,55 2002-08-05 7/15 AC TEST CONDITIONS PARAMETER TEST CONDITION Input pulse level 0.2 V, VDD × 0.7 V + 0.2 V tR, tF 1V / ns(Fig.1) Timing measurements VDD × 0.5 Reference level VDD × 0.5 Output load 30 pF + 1 TTL Gate(Fig.2) Fig.1 : Input rise and fall time Fig.2 : Output load FUNCTION SYMBOL PARAMETER MIN MAX UNIT tBS BYTE Setup Time 5 ms tBR BYTE Recovery Time 5 ms TIMING DIAGRAMS BYTE Dout 30 pF R2 VTM R1 R1 = 810 Ω R2 = 1610 Ω VTM = 2.3 V GND 90% 1 V/ns tR 10% 90% 10% tF VDD Typ 1 V/ns BYTE CE2 tBS 1 CE tBR BYTE |
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