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74LVC1G58GW 데이터시트(PDF) 1 Page - NXP Semiconductors

부품명 74LVC1G58GW
상세설명  Low-power configurable multiple function gate
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제조업체  PHILIPS [NXP Semiconductors]
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1.
General description
The 74LVC1G58 is a high-performance, low-power, low-voltage, Si-gate CMOS device,
superior to most advanced CMOS compatible TTL families.
Inputs can be driven from either 3.3 V or 5 V devices. This feature allows the use of this
device in a mixed 3.3 V and 5 V environment.
This device is fully specified for partial power-down applications using Ioff. The Ioff circuitry
disables the output, preventing the damaging backflow current through the device when it
is powered down.
The 74LVC1G58 provides configurable multiple functions. The output state is determined
by eight patterns of 3-bit input. The user can choose the logic functions AND, OR, NAND,
NOR, XOR, inverter and buffer. All inputs can be connected to VCC or GND.
The three inputs (A, B and C) are capable of transforming slowly changing input signals
into sharply defined, jitter-free output signals.
The gate switches at different points for positive and negative-going signals. The
difference between the positive voltage VT+ and the negative voltage VT− is defined as the
hysteresis voltage VH.
2.
Features
s Wide supply voltage range from 1.65 V to 5.5 V
s 5 V tolerant input/output for interfacing with 5 V logic
s High noise immunity
s Complies with JEDEC standard:
x JESD8-7 (1.65 V to 1.95 V)
x JESD8-5 (2.3 V to 2.7 V)
x JESD8B/JESD36 (2.7 V to 3.6 V).
s
±24 mA output drive (V
CC = 3.0 V)
s ESD protection:
x HBM EIA/JESD22-A114-B exceeds 2000 V
x MM EIA/JESD22-A115-A exceeds 200 V.
s CMOS low power consumption
s Latch-up performance exceeds 250 mA
s Direct interface with TTL levels
s Inputs accept voltages up to 5 V
s Multiple package options
s Specified from
−40 °C to +85 °C and −40 °C to +125 °C.
74LVC1G58
Low-power configurable multiple function gate
Rev. 01 — 15 September 2004
Product data sheet


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