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SI4370DY 데이터시트(PDF) 4 Page - Vishay Siliconix |
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SI4370DY 데이터시트(HTML) 4 Page - Vishay Siliconix |
4 / 9 page Si4370DY Vishay Siliconix www.vishay.com 4 Document Number: 72022 S-32621—Rev. C, 29-Dec-03 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) MOSFET CHANNEL-1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.00 0.01 0.02 0.03 0.04 0.05 0.06 0 2468 10 TJ = 150_C ID = 7.5 A 20 10 0.1 Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage VSD − Source-to-Drain Voltage (V) VGS − Gate-to-Source Voltage (V) −0.8 −0.6 −0.4 −0.2 −0.0 0.2 0.4 −50 −25 0 25 50 75 100 125 150 ID = 250 mA Threshold Voltage TJ − Temperature (_C) Safe Operating Area, Junction-to-Foot VDS − Drain-to-Source Voltage (V) 100 1 0.1 1 10 100 0.01 10 100 ms 0.1 Limited by rDS(on) TC = 25_C Single Pulse 1 s 10 s dc 1 TJ = 25_C 10 ms 1 ms 0 60 100 20 40 Single Pulse Power, Junction-to-Ambient Time (sec) 80 110 10−1 10−2 10−3 |
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