KSE13009F datasheet(1/5 Pages) FAIRCHILD

부품명	KSE13009F

상세설명	High Voltage Switch Mode Application

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제조업체	FAIRCHILD [Fairchild Semiconductor]

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Rev. A, February 2000

NPN Silicon Transistor

Absolute Maximum Ratings T

C=25°C unless otherwise noted

Electrical Characteristics T

C=25°C unless otherwise noted

* Pulse Test: PW

≤300µs, Duty Cycle≤2%

Symbol

Parameter

Value

Units

VCBO

Collector-Base Voltage

700

V

V CEO

Collector-Emitter Voltage

400

V

VEBO

Emitter-Base Voltage

9

V

IC

Collector Current (DC)

12

A

ICP

Collector Current (Pulse)

24

A

IB

Base Current

6

A

PC

Collector Dissipation (TC=25°C)

50

W

TJ

Junction Temperature

150

°C

TSTG

Storage Temperature

-65 ~ 150

°C

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Units

VCEO(sus)

Collector-Emitter Sustaining Voltage

IC = 10mA, IB = 0

400

V

IEBO

Emitter Cut-off Current

VEB = 7V, IC = 0

1

mA

hFE

DC Current Gain

VCE = 5V, IC = 5A

VCE = 5V, IC = 8A

8

6

40

30

VCE(sat)

Collector-Emitter Saturation Voltage

IC = 5A, IB = 1A

IC = 8A, IB = 1.6A

IC = 12A, IB = 3A

1

1.5

3

V

VBE(sat)

Base-Emitter Saturation Voltage

IC = 5A, IB = 1A

IC = 8A, IB = 1.6A

1.2

1.6

V

Cob

Output Capacitance

VCB = 10V , f = 0.1MHz

180

pF

fT

Current Gain Bandwidth Product

VCE = 10V, IC = 0.5A

4

MHz

tON

Turn ON Time

VCC =125V, IC = 8A

IB1 = - IB2 = 1.6A

RL = 15,6Ω

1.1

µs

tSTG

Storage Time

3

µs

tF

Fall Time

0.7

µs

High Voltage Switch Mode Application

• High Speed Switching

• Suitable for Switching Regulator and Motor Control

KSE13009F

1

1.Base

2.Collector

3.Emitter

TO-220F

유사한 부품 번호 - KSE13009F

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