FMF4N60 datasheet(3/7 Pages) FCI

부품명	FMF4N60

상세설명	4A 600V N CHANNEL ISOLATED POWER MOSFET

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제조업체	FCI [First Components International]

홈페이지	http://www.cotra.com.tw/

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0.2

0.4

0.6

0.8

1.0

1.2

1.4

10

-1

10

0

10

1

150℃

Notes :

※

1. V

GS = 0V

2. 250µs Pulse Test

25℃

V

SD, Source-Drain voltage [V]

246

8

10

-1

10

0

10

1

150

oC

25

oC

-55

oC

Notes :

※

1. V

DS = 40V

2. 250µs Pulse Test

V

GS, Gate-Source Voltage [V]

0

4

8

12

16

20

0

2

4

6

8

10

12

V

DS = 300V

V

DS = 120V

V

DS = 480V

Note : I

※

D = 4.0 A

Q

G, Total Gate Charge [nC]

10

-1

10

0

10

1

0

500

1000

C

oss

C

iss = Cgs + Cgd (Cds = shorted)

C

oss = Cds + Cgd

C

rss = Cgd

Notes :

※

1. V

GS = 0 V

2. f = 1 MHz

C

rss

C

iss

V

DS, Drain-Source Voltage [V]

0

2

4

6

8

10

12

0

2

4

6

8

10

12

V

GS = 20V

V

GS = 10V

Note: T

※

J = 25℃

I

D, Drain Current [A]

10

-1

10

0

10

1

10

-1

10

0

10

1

V

GS

Top:

15.0V

10.0V

8.0V

7.0V

6.5V

6.0V

5.5V

Bottom: 5.0V

Notes :

※

1. 250µs PulseTest

2. T

C = 25℃

V

DS, Drain-Source Voltage [V]

Typical Characteristics

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

Figure 3. On-Resistance Variation vs

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation with Source Current

and Temperature

Figure 2. Transfer Characteristics

Figure 1. On-Region Characteristics

FMF4N60 4A 600V N CHANNEL ISOLATED POWER MOSFET

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