전자부품 데이터시트 검색엔진 |
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2SD1858 데이터시트(PDF) 2 Page - Foshan Blue Rocket Electronics Co.,Ltd. |
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2SD1858 데이터시트(HTML) 2 Page - Foshan Blue Rocket Electronics Co.,Ltd. |
2 / 7 page 2SD1858 Rev.E Mar.-2016 DATA SHEET http://www.fsbrec.com 2 / 7 参数 Parameter 符号 Symbol 数值 Rating 单位 Unit Collector to Base Voltage VCBO 40 V Collector to Emitter Voltage VCEO 32 V Emitter to Base Voltage VEBO 5.0 V Collector Current (DC) IC 1.0 A Collector Current (Pulse) ICP 2.0 A Collector Power Dissipation PC 1.0 W Junction Temperature Tj 150 ℃ Storage Temperature Range Tstg -55~150 ℃ 参数 Parameter 符号 Symbol 测试条件 Test Conditions 最小值 Min 典型值 Typ 最大值 Max 单位 Unit Collector to Base Breakdown Voltage VCBO IC=50μA IB=0 40 V Collector to Emitter Breakdown Voltage VCEO IC=1.0mA IB=0 32 V Emitter to Base Breakdown Voltage VEBO IE=50μA IC=0 5.0 V Collector Cut-Off Current ICBO VCB=20V IE=0 0.5 μA Emitter Cut-Off Current IEBO VEB=4.0V IC=0 0.5 μA DC Current Gain hFE VCE=3.0V IC=100mA 82 390 Collector to Emitter Saturation Voltage VCE(sat) IC=500mA IB=50mA 0.15 0.4 V Transition Frequency fT VCE=5.0V IC=50mA f=100MHz 150 MHz Collector output capacitance Cob VCB=10V IE=0 f=1.0MHz 15 pF 极限参数 / Absolute Maximum Ratings(Ta=25℃) 电性能参数 / Electrical Characteristics(Ta=25℃) |
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