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BU808 데이터시트(PDF) 4 Page - List of Unclassifed Manufacturers

부품명 BU808
상세설명  HIGH VOLTAGE FAST-SWITCHING NPN POWER DARLINGTON
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BU808 데이터시트(HTML) 4 Page - List of Unclassifed Manufacturers

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Switching Time Inductive Load at 16KHZ
Reverse Biased SOA
BASE DRIVE INFORMATION
In order to saturate the power switch and reduce
conduction losses, adequate direct base current
IB1 has to be provided for the lowest gain hFE at
100
oC (line scan phase). On the other hand,
negative base current IB2 must be provided to
turn off the power transistor (retrace phase).
Most
of
the
dissipation,
in
the
deflection
application, occurs at switch-off. Therefore it is
essential to determine the value of IB2 which
minimizes
power
losses,
fall
time
tf
and,
consequently, Tj. A new set of curves have been
defined to give total power losses, ts and tf as a
function of
IB2
at both
16 KHz scanning
frequencies for choosing the optimum negative
drive. The test circuit is illustrated in figure 1.
Inductance L1 serves to control the slope of the
negative base current IB2 to recombine the
excess carrier in the collector when base current
is still present, this would avoid any tailing
phenomenon in the collector current.
The values of L and C are calculated from the
following equations:
1
2
L
(IC)2 =
1
2
C
(VCEfly)2
ω= 2 πf =
1
√
L C
Where IC= operating collector current, VCEfly=
flyback voltage, f= frequency of oscillation during
retrace.
BU808DFI
4/7


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