전자부품 데이터시트 검색엔진 |
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2SD1936M 데이터시트(PDF) 2 Page - Foshan Blue Rocket Electronics Co.,Ltd. |
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2SD1936M 데이터시트(HTML) 2 Page - Foshan Blue Rocket Electronics Co.,Ltd. |
2 / 6 page 2SD1936M Rev.F Apr.-2017 DATA SHEET http://www.fsbrec.com 2 / 6 参数 Parameter 符号 Symbol 数值 Rating 单位 Unit Collector to Base Voltage VCBO 15 V Collector to Emitter Voltage VCEO 15 V Emitter to Base Voltage VEBO 5.0 V Collector Current IC 0.8 A Collector Current(Pulse) ICP 3.0 A Collector Power Dissipation PC 250 mW Junction Temperature Tj 150 ℃ Storage Temperature Range Tstg -55~150 ℃ 参数 Parameter 符号 Symbol 测试条件 Test Conditions 最小值 Min 典型值 Typ 最大值 Max 单位 Unit Collector-Base Breakdown Voltage VCBO IC=10μA IE=0 15 V Collector-Emitter Breakdown Voltage VCEO IC=1.0mA RBE=∞ 15 V Emitter-Base Breakdown Voltage VEBO IE=10μA IC=0 5.0 V Collector Cut-Off Current ICBO VCB=12V IE=0 0.1 μA Emitter Base Cut-Off Current IEBO VEB=4.0V Ic=0 0.1 μA hFE(1) VCE=2.0V Ic=50mA 140 800 DC Current Gain hFE(2) VCE=2.0V Ic=800mA 80 VCE(sat)(1) Ic=5.0mA IB=0.5mA 0.01 0.025 V Collector to Emitter Saturation Voltage VCE(sat)(2) Ic=400mA IB=20mA 0.1 0.2 V Base to Emitter Saturation Voltage VBE(sat) Ic=400mA IB=20mA 0.9 1.2 V Transition Frequency fT VCE=2.0V IC=50mA 200 MHz Collector Output Capacitance Cob VCB=10V IE=0 f=1.0MHz 10 pF 极限参数 / Absolute Maximum Ratings(Ta=25℃) 电性能参数 / Electrical Characteristics(Ta=25℃) |
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