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STN4260 데이터시트(Datasheet) 1 Page - Stanson Technology

부품명 STN4260
상세내용  N Channel Enhancement Mode MOSFET
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제조사  STANSON [Stanson Technology]
홈페이지  http://www.stansontech.com
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STN4260
N Channel Enhancement Mode MOSFET
18A
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2008, Stanson Corp.
STN4260 2016. V1
DESCRIPTION
STN4260 is the N-Channel logic enhancement mode power field effect transistor
which is produced using high cell density. This high density process is especially
tailored to minimize on-state resistance. These devices are particularly suited for low
voltage application such as power management and other battery powered circuits
where high-side switching.
PIN CONFIGURATION
SOP-8
PART MARKING
Y: Year Code
A: Porduce Code
P: Process Code
FEATURE
l
60V/10A, RDS(ON) = 11.5mΩ (Typ.)
@VGS = 10V
l
60V/8A, RDS(ON) = 12.5mΩ
@VGS = 4.5V
l
Super high density cell design for
extremely low RDS(ON)
l
Exceptional on-resistance and
maximum DC current capability
l
SOP-8 package design




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