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STP2327 데이터시트(Datasheet) 1 Page - Stanson Technology

부품명 STP2327
상세내용  P Channel Enhancement Mode MOSFET
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제조사  STANSON [Stanson Technology]
홈페이지  http://www.stansontech.com
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STP2327
P Channel Enhancement Mode MOSFET
-1.5A
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
STP2327 2013. Rev.1
DESCRIPTION
STP2327 is the P-Channel logic enhancement mode power field effect transistor which
is produced using high cell density, DMOS trench technology. This high density
process is especially tailored to minimize on-state resistance. These devices are
particularly suited for low voltage application such as cellular phone and notebook
computer power management, other battery powered circuits, and low in-line power
loss are required. The product is in a very small outline surface mount package.
PIN CONFIGURATION
SOT-23-6L
PART MARKING
Y: Year Code
A: date Code
FEATURE
l
-100V/-1.5.0A, RDS(ON) = 520m-ohm (Typ.)
@VGS = -10V
l
-100V/-0.5.0A, RDS(ON) = 600m-ohm
@VGS = -4.5V
l
Super high density cell design for
extremely low RDS(ON)
l
Exceptional on-resistance and maximum
DC current capability
l
SOT-23-6L package design




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