6N135, 6N136

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Vishay Semiconductors

Rev. 1.9, 02-Nov-15

2

Document Number: 83604

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Note

• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not

implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute

maximum ratings for extended periods of the time can adversely affect reliability.

Note

• Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering

evaluation. Typical values are for information only and are not part of the testing requirements.

PARAMETER

CONDITION

SYMBOL

VALUE

UNIT

INPUT

Reverse voltage

5V

Forward current

25

mA

Peak forward current

t = 1 ms, duty cycle 50 %

50

mA

Maximum surge forward current

t

≤ 1 μs, 300 pulses/s

1

A

Thermal resistance

700

K/W

Power dissipation

45

mW

OUTPUT

Supply voltage

-0.5 to 15

V

Output voltage

-0.5 to 15

V

Emitter base voltage

5V

Output current

8mA

Maximum output current

16

mA

Base current

5mA

Thermal resistance

300

K/W

Power dissipation

100

mW

COUPLER

Storage temperature range

-55 to +150

°C

Ambient temperature range

-55 to +100

°C

Soldering temperature

max.

≤ 10 s, dip soldering

≥ 0.5 mm from case bottom

260

°C

PARAMETER

TEST CONDITION

PART

SYMBOL

MIN.

TYP.

MAX.

UNIT

INPUT

Forward voltage

-

1.33

1.9

V

Breakdown voltage

5-

-

V

Reverse current

-

0.5

10

μA

Capacitance

-30

-

pF

Temperature coefficient, forward voltage

--1.7

-

mV/°C

OUTPUT

Logic low supply current

-150

-

μA

Logic high supply current

-0.01

1

μA

Output voltage, output low

6N135

-0.1

0.4

V

6N136

-0.1

0.4

V

Output current, output high

-

3

500

nA

-0.01

1

μA

COUPLER

Capacitance (input to output)

f = 1 MHz

-

0.6

-

pF