S9013 datasheet(1/4 Pages) JIANGSU

부품명	S9013

상세설명	SOT-23 Plastic-Encapsulate Transistors

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제조업체	JIANGSU [Jiangsu Changjiang Electronics Technology Co., Ltd]

홈페이지	http://www.cj-elec.com/en/

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

SOT-23 Plastic-Encapsulate Transistors

S9013

TRANSISTOR (NPN)

FEATURES

High Collector Current.

Complementary to S9012.

Excellent hFE Linearity.

MARKING: J3

MAXIMUM RATINGS (Ta=25

℃ unless otherwise noted)

Symbol

Parameter

Value

Unit

VCBO

Collector-Base Voltage

40

V

VCEO

Collector-Emitter Voltage

25

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current

500

mA

PC

Collector Power Dissipation

300

mW

RΘJA

Thermal Resistance From Junction To Ambient

416

℃/W

Tj

Junction Temperature

150

℃

Tstg

Storage Temperature

-55～+150

℃

ELECTRICAL CHARACTERISTICS (Ta=25

℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

V(BR)CBO

IC=0.1mA, IE=0

40

V

Collector-emitter breakdown voltage

V(BR)CEO

IC=1mA, IB=0

25

V

Emitter-base breakdown voltage

V(BR)EBO

IE=0.1mA, IC=0

5

V

Collector cut-off current

ICBO

VCB=40V, IE=0

0.1

uA

Collector cut-off current

ICEO

VCE=20V, IB=0

0.1

uA

Emitter cut-off current

IEBO

VEB=5V, IC=0

0.1

uA

hFE(1)

VCE=1V, IC=50mA

120

400

DC current gain

hFE(2)

VCE=1V, IC=500mA

40

Collector-emitter saturation voltage

VCE(sat)

IC=500mA, IB=50mA

0.6

V

Base-emitter saturation voltage

VBE(sat)

IC=500mA, IB=50mA

1.2

V

Base-emitter voltage

VBE

VCB=1V,IC=10mA,

0.7

V

Transition frequency

fT

VCE=6V,IC=20mA, f=30MHz

150

MHz

Collector output capacitance

Cob

VCB=6V, IE=0, f=1MHz

8

pF

CLASSIFICATION OF

hFE(1)

RANK

L

H

J

RANGE

120-200

200-350

300-400

SOT–23

1. BASE

2. EMITTER

3. COLLECTOR

www.cj-elec.com

1

A,Jun,2014

www.cj-elec.com

C,Oct,2014

JC T

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